Chinese Academy of Sciences

Other

Forschungszentrum Julich Gmbh

Xiaoming Xie

Hong Xie

Guangyuan Lu

Shujie Tang

Guqiao Ding

Lingxiu Chen

Xuefu Zhang

Xiujun Wang

Huishan Wang

Chen Xiao Wang

Lei Li

Lei Chen

Chao B Zhang

Zhen Wang

Chao Yang

Qingbo Liu

Hailong Wang

Ji Yu Chen

Zengfeng Di

Yi Zhang

Haomin Wang

Mianheng Jiang

Hans-Joachim Krause

Tianru Wu

Li He

Shumin Wang

Da Jiang

Qian Gong

Daoli Zhang

Norbert Wolters

Andreas Offenhäusser

J&uuml;rgen Freytag

Zhongzhe Shen

Frank Stubhan

Zhiyuan Shi

Yongliang Wang

Hui Dong

The present disclosure provides a method for preparing a multi-layer hexagonal boron nitride film, including: preparing a substrate; preparing a boron-containing solid catalyst, and disposing the boron-containing solid catalyst on the substrate; annealing the boron-containing solid catalyst to melt the boron-containing solid catalyst; feeding a nitrogen-containing gas and a protecting gas to an atmosphere in which the melted boron-containing solid catalyst resides, the nitrogen-containing gas reacts with the boron-containing solid catalyst to form the multi-layer hexagonal boron nitride film on a surface of the substrate. The method for preparing a multi-layer hexagonal boron nitride film can prepare a hexagonal boron nitride film having a lateral size in the order of inches and a thickness from several nanometers to several hundred nanometers on the surface of the substrate, providing a favorable basis for the application of hexagonal boron nitride in the field of two-dimensional material devices.

Method for preparing multi-layer hexagonal boron nitride film

A method for adjusting and controlling a boundary of graphene, comprising: providing an insulating substrate and placing the insulating substrate in a growth chamber; and feeding first reaction gas into the growth chamber, the first reaction gas at least comprising carbon source gas, and controlling a flow rate of the first reaction gas to forming a graphene structure having a first boundary shape on a surface of the insulating substrate through controlling a flow rate of the first reaction gas. The present invention realizes the controllability of the boundary of the graphene by adjusting the ratio of the carbon source gas to catalytic gas in the growth process of graphene on the surface of the substrate; the present invention can enable graphene to sequentially continuously grow by changing growth conditions on the basis of already formed graphene, so as to change the original boundary shape of the graphene.

Method for adjusting and controlling boundary of graphene

An ultrahigh resolution magnetic resonance imaging method and apparatus, the method comprises the following steps of: placing a test sample within an action range of a magnetic gradient source and a nano-scale superconducting quantum interference device, applying a static magnetic field on the test sample by a static magnetic source, and applying a nuclear magnetic resonance radio-frequency pulse on the test sample by a radio-frequency source to excite the test sample to cause nuclear magnetic resonance; directly coupling the nano-scale superconducting quantum interference device with the test sample to detect nuclear magnetic resonance spectrum signals generated by the test sample; establishing an image of the test sample according to the detected nuclear magnetic resonance spectrum signals and space distribution information of gradient magnetic fields generated by the magnetic gradient source.

Ultrahigh resolution magnetic resonance imaging method and apparatus

The present disclosure provides a local carbon-supply device and a method for preparing a wafer-level graphene single crystal by local carbon supply. The method includes: providing the local carbon-supply device; preparing a nickel-copper alloy substrate, placing the nickel-copper alloy substrate in the local carbon-supply device; placing the local carbon-supply device provided with the nickel-copper alloy substrate in a chamber of a chemical vapor-phase deposition system, and introducing a gaseous carbon source into the local carbon-supply device to grow the graphene single crystal on the nickel-copper alloy substrate. A graphene prepared by embodiments of the present disclosure has the advantages of good crystallinity of a crystal domain, simple preparation condition, low cost, a wider window of condition parameters required for growth, and good repeatability, which lays a foundation for wide application of the wafer-level graphene single crystal in a graphene apparatus and other fields.

Local carbon-supply device and method for preparing wafer-level graphene single crystal by local carbon supply

The present invention provides a growth method of grapheme, which at least comprises the following steps: S: providing an insulating substrate, placing the insulating substrate in a growth chamber; S: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.

Growth method of graphene

The invention belongs to the technical field of inorganic compounds, and particularly, relates to a method for directly preparing graphene by taking CBras a source material and using methods such as molecular-beam epitaxy (MBE) or chemical vapor deposition (CVD). A method for preparing graphene comprises the following steps: selecting a proper material as a substrate; directly depositing a catalyst and CBron a surface of the substrate; and performing annealing treatment on the sample obtained through deposition. Compared with other technologies, an innovative point of the method in the invention is that the catalyst and CBrsource can be quantitatively and controllably deposited on any substrate, and the catalyst and CBrsource react on the surface of the substrate to form the graphene, so that the dependence of the graphene growth on a substrate material can be reduced to a great extent, and different substrate materials can be selected according to different application backgrounds.

Method for preparing graphene

A preparation method of a graphene nanoribbon on h-BN, comprising: 1) forming a h-BN groove template with a nano ribbon-shaped groove structure on the h-BN by adopting a metal catalysis etching method; 2) growing a graphene nanoribbon in the h-BN groove template by adopting a chemical vapor deposition method. In the present invention, a CVD method is adopted to directly prepare a morphology controllable graphene nanoribbon on the h-BN, which helps to solve the long-term critical problem that the graphene is difficult to nucleate and grow on an insulating substrate, and to avoid the series of problems introduced by the complicated processes of the transferring of the graphene and the subsequent clipping manufacturing for a nanoribbon and the like.

Preparation method of graphene nanoribbon on h-BN

A method for growing a graphene nanoribbon on an insulating substrate having a cleavage plane with atomic level flatness is provided, and belongs to the field of low-dimensional materials and new materials. The method includes the following steps. Step 1: Cleave an insulating substrate to obtain a cleavage plane with atomic level flatness, and prepare a single atomic layer step. Step 2: Directly grow a graphene nanoribbon on the insulating substrate having regular single atomic steps. In the method, a characteristic that nucleation energy of graphene on the atomic step is different from that on the flat cleavage plane is used, and conditions, such as the temperature, intensity of pressure and supersaturation degree of activated carbon atoms, are adjusted, so that the graphene grows only along a step edge into a graphene nanoribbon of an adjustable size. The method is mainly applied to the field of new-type graphene optoelectronic devices.

Method for preparing graphene nanoribbon on insulating substrate

The invention relates to a component and to a method for the production. The component is an electronic component with a micro electronic chip and a carrier which is produced by means of isothermal coagulation.

Component and method for production thereof

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Shanghai, China

Xiaoming Xie