Applied Materials, Inc.

Applied Material, Inc.

Betone Technology Shanghai, Inc.

Xiaoliang Jin

Jun Zhao

Lee Luo

Charles N Dornfest

Yaxin Wang

Frank P Chang

Po Tang

Errol Antonio C Sanchez

Pravin K Narwankar

Shulin Wang

Aihua Chen

Henry Ho

Steven Aihua Chen

Yuji Maeda

R Suryanarayanan Iyer

Xianzhi Tao

Deepak Upadhyaya

Christopher Wade

Nobuo Tokai

Janardhanan Anand Subramony

Annabel Susan Nickles

Elaine Pao

Randhir P Singh Thakur

Chang-Lian Yan

Waleyweitsung Sung

Zhongyun Li

A reciprocating rotary CVD apparatus and a method for applying same. The reciprocating rotary CVD apparatus includes a cavity, a wafer heating base, a rotating apparatus. The rotating apparatus is located outside the cavity and includes a rotating power mechanism and a rotating sealing mechanism, and the rotating sealing mechanism includes a rotating member and a fixed member; the fixed member is fixedly and hermetically connected to the cavity, the rotating member is fixedly and hermetically connected to the wafer heating base, the rotating member is movably and hermetically connected to the fixed member, and the rotating member is connected to the rotating power mechanism, to drive, by using the rotating power mechanism, the rotating member and the wafer heating base to perform reciprocating rotation. In the present invention, the rotating apparatus rotates, to improve the uniformity of thin film deposition in a circumferential direction of a wafer.

Reciprocating rotary CVD equipment and application method

A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.

Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber

An apparatus that includes a pumping plate having a skirt, where the skirt contains a number of holes and a wafer access slot, and where the number of holes are sized and positioned to provide uniform heating of a susceptor.

Emissivity-change-free pumping plate kit in a single wafer chamber

The present invention generally provides a deposition chamber for depositing materials which require vaporization, especially low volatility precursors, which are transported as a liquid to a vaporizer to be converted to vapor phase through one or more vaporizing elements and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. In one aspect, the chamber comprises a series of heated temperature controlled internal liners as vaporizing surfaces which are configured for rapid removal, cleaning and/or replacement and preferably are made of a material having a thermal coefficient of expansion close to that of the deposition material. The vaporizing surfaces &ldquo;flash&rdquo; sprayed liquid precursors on the surface of the vaporizing surfaces and then purify the flashed precursors before flowing further into the system. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules. Preferably, internal surfaces of the chamber are adjustable and maintainable at a suitable temperature above ambient, e.g., about 150&deg; C. to about 300&deg; C., to prevent decomposition and/or condensation of vaporized material on the chamber and related gas flow surfaces.

High temperature filter for CVD apparatus

The present invention provides a method of forming a ruthenium seed layer on a substrate comprising the steps of introducing a ruthenium-containing compound into a CVD apparatus; introducing oxygen into the CVD apparatus; maintaining an oxygen rich environment in the process chamber for the initial formation of a ruthenium oxide seed layer; vaporizing the ruthenium-containing compound; depositing the ruthenium oxide seed layer onto the substrate by chemical vapor deposition; and annealing the deposited ruthenium oxide seed layer in a gas ambient forming a ruthenium seed layer. Also provided is a method of depositing a ruthenium thin metal film using a metalorganic precursor onto a CVD ruthenium seed layer by metalorganic chemical vapor deposition.

CVD ruthenium seed for CVD ruthenium deposition

A capacitor structure comprising a bottom electrode, an insulator and a top electrode, and method for manufacturing the same. The bottom and top electrodes preferably include a metal portion and a conducting oxygen-containing metal portion. In one embodiment, a layer of ruthenium is deposited to form a portion of the bottom electrode. Prior to deposition of the insulator, the ruthenium is annealed in an oxygen-containing environment. The insulator is then deposited on the oxygen-containing ruthenium layer. Formation of the top electrode includes depositing a first metal on the insulator, annealing the first metal and then depositing a second metal. The first and second metals may be ruthenium.

Method of forming metal electrodes

The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the vaporization of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, for deposition on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules. The vaporizer comprises thermally controlled components which are adapted for easy assembly and disassembly. A main vaporizing section provides a large heated surface for flash vaporization. A high conductance blocker is disposed at a lower end of the vaporizer to provide an extended vaporization surface. Optionally, a filter may be employed to capture unvaporized precursor droplets.

Chemical vapor deposition vaporizer

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San Jose, CA, United States of America

Xiaoliang Jin