Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Xiaohui Zhuang

Liang Wang

Yi Lu

Wenjie Zhu

Yihua Shen

Le Li

Yunchu Yu

Yihui Lin

Kaige Gao

Jialin Zhao

Semiconductor structure and its fabrication method are provided. The method includes providing a substrate, where the substrate includes a first region having a first metal structure and a second region having a second metal structure; forming a device layer on each of top surfaces of the substrate, the first metal structure and the second metal structure; forming a first through hole in the device layer at the first region, where the first through hole exposes at least a portion of surfaces of the first metal structure, and forming a second through hole in the device layer at the second region, where the second through hole passes through the first device and exposes at least a portion of surfaces of the second metal structure; and using a selective metal growth process, forming a first plug in the first through hole and forming a second plug in the second through hole.

Forming metal plug through a hole in a device including a resistance layer and contacting embedded conductive structures

A method is provided for fabricating a fin field-effect transistor. The method includes providing a substrate having a first region and a second region; and forming a plurality of fin structures on a surface of the substrate. The method also includes forming a first mask layer having a plurality of first openings exposing the fin structures in the first region near the second region; and removing the fin structures in the first region near the second region. Further, the method includes forming a second mask layer on the fin structures in the second region; and removing the fin structures in the first region. Further, the method also includes forming fins by etching the substrate using the fin structures in the second region as an etching mask; and forming a gate structure and source/drain regions in the fins at both sides of the gate structure.

Fin field effect transistors and fabrication method thereof

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Shanghai, China

Xiaohui Zhuang