Xidian University

Xiaohua Ma

Yue Hao

Yingzhe Wang

Ling Yang

Peixian Li

Shihui Wang

Peng Ji

Xiaowei Zhou

Xuefeng Zheng

Zhenling Tang

Jiejie Zhu

Jingshu Guo

Shuaishuai Dong

Chong Wang

A GaN-based device based on patterned ohmic contact is provided, including: a substrate layer, a nucleation layer, a buffer layer, a channel layer, an insertion layer, a barrier layer and a cap layer sequentially disposed in that order from bottom to top. Two ends of the cap layer respectively define ohmic contact recesses extending into the channel layer. A side wall of each ohmic contact recess close to the gate electrode includes multiple arc-shaped side walls and multiple flat side walls. Two epitaxial layers are disposed in the ohmic contact recesses respectively. A passivation layer is covered on the cap layer and the two epitaxial layers, a source electrode and a drain electrode penetrate through the passivation layer and are disposed on the two epitaxial layers respectively. A gate electrode is located between the ohmic contact recesses, and penetrates through the passivation layer and extends to the cap layer.

Gan-based device based on patterned ohmic contact and manufacturing method thereof

The present disclosure provides a method for characterizing ohmic contact electrode performance of a semiconductor device. The method comprises: preparing two sets of testing patterns on a semiconductor device; testing resistance values of the two sets of testing patterns respectively; calculating a sheet resistance of an ohmic contact area according to the obtained resistance values; and evaluating the ohmic contact electrode performance of the semiconductor device according to the sheet resistance of the ohmic contact electrode.

Method for characterizing ohmic contact electrode performance of semiconductor device

A UV LED device and the method for fabricating the same are provided. The device has aluminum nitride nucleating layers, an intrinsic aluminum gallium nitride epitaxial layer, an n-type aluminum gallium nitride barrier layer, an active region, a first p-type aluminum gallium nitride barrier layer, a second p-type aluminum gallium nitride barrier layer, and a p-type gallium nitride cap layer arranged from bottom to top on a substrate. A window region is etched in the p-type gallium nitride cap layer for emitting the light generated.

Ultraviolet light emitting diode devices and methods for fabricating the same

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Xi'an, China

Xiaohua Ma