Applied Materials, Inc.

Xiaodong Yang

Lizhong Sun

Yi Yang

Jian J Chen

Mark Roger Covington

Vivek Vinit

Chong Ma

Vishal Agrawal

Yufei Zhou

A chamber includes a target () and a magnetron () disposed over the target (). The magnetron () includes a plurality of magnets (). The magnetron () has a longitudinal dimension and a lateral dimension. The longitudinal dimension of the magnetron () is tilted with respect to the target () so the distances between magnets () and the target () vary. As the magnetron () rotates during operation, the strength of the magnetic field produced by the magnetron () is an average of the various strengths of magnetic fields produced by the magnets (). The averaging of the strengths of the magnetic fields leads to uniform film properties and uniform target erosion.

Tilted magnetron in a PVD sputtering deposition chamber

Methods and apparatus are used for adjusting film stress profiles on substrates. An apparatus may include a PVD chamber with a pedestal configured to support a substrate during processing on a cover positioned on an uppermost surface of the pedestal. The cover is constructed with multiple electrodes such as, for example, a first electrode, a second electrode, and a third electrode. The second electrode is positioned between and electrically separated from the first electrode and the second electrode. A substrate stress profile tuner is electrically connected to the first electrode, the second electrode, and the third electrode and configured to independently adjust an RF voltage level of at least the second electrode and the third electrode relative to RF ground to produce a more uniform film stress profile.

Methods and apparatus for zone control of RF bias for stress uniformity

The present disclosure provides methods for forming a metal containing material onto a substrate with good film uniformity and stress profile across the substrate. In one embodiment, a method of sputter depositing a metal containing layer on a substrate includes supplying a gas mixture into a processing chamber, forming a first portion of a metal containing layer on a substrate, transferring the substrate from the processing chamber, rotating the substrate, transferring the substrate back to the processing chamber, and forming a second portion of the metal containing layer on the first portion of the metal containing layer.

Method and apparatus for depositing a metal containing layer on a substrate

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Xi'an, China

Xiaodong Yang