Taiwan Semiconductor Manufacturing Comp. Ltd.

Xiao-Meng Chen

Chia-Shiung Tsai

Yeur-Luen Tu

Cheng-Ta Wu

Sheng-Chau Chen

Chih-Hui Huang

Chung-Yen Chou

Hsin-Yi Tsai

Po-Ju Chen

Chih-Ching Cheng

Po-ken Lin

The mechanisms for cleaning a surface of a semiconductor wafer for a hybrid bonding are provided. The method for cleaning a surface of a semiconductor wafer for a hybrid bonding includes providing a semiconductor wafer, and the semiconductor wafer has a conductive pad embedded in an insulating layer. The method also includes performing a plasma process to a surface of the semiconductor wafer, and metal oxide is formed on a surface of the conductive structure. The method further includes performing a cleaning process using a cleaning solution to perform a reduction reaction with the metal oxide, such that metal-hydrogen bonds are formed on the surface of the conductive structure. The method further includes transferring the semiconductor wafer to a bonding chamber under vacuum for hybrid bonding. The mechanisms for a hybrid bonding and a integrated system are also provided.

Mechanisms for cleaning substrate surface for hybrid bonding

A plasma-processing apparatus is provided. The plasma-processing apparatus includes a processing chamber having an upper portion and a lower portion. The upper portion has a gas inlet. The plasma-processing apparatus includes an upper electrode plate disposed in the upper portion. The upper electrode plate has gas holes passing through the upper electrode plate. The plasma-processing apparatus includes a protective layer disposed over inner walls of the gas holes. The protective layer and the upper electrode plate have different materials. The plasma-processing apparatus includes a lower electrode pedestal disposed in the lower portion for supporting a substrate.

Plasma-processing apparatus with upper electrode plate and method for performing plasma treatment process

A novel method for manufacturing a semiconductor device and a semiconductor device are provided. The semiconductor device includes a substrate, a trench capacitor, a contact pad, an inter-layer dielectric (ILD) layer and contact elements. The trench capacitor includes a doped region, a first dielectric layer, a bottom electrode, a second dielectric layer and a top electrode, in which the contact pad is positioned on the doped region. The ILD layer has contact windows, and the contact elements are disposed therein. Because of the presence of the contact pad positioned on the doped region, the thickness of the ILD layer over the top electrode is increased but still satisfying the requirement of the maximum depth limit to the contact windows of etching the ILD layer.

Method for manufacturing semiconductor device and semiconductor device

Embodiments of mechanisms for cleaning a surface of a semiconductor wafer for a hybrid bonding are provided. The method for cleaning a surface of a semiconductor wafer for a hybrid bonding includes providing a semiconductor wafer, and the semiconductor wafer has a conductive pad embedded in an insulating layer. The method also includes performing a plasma process to a surface of the semiconductor wafer, and metal oxide is formed on a surface of the conductive structure. The method further includes performing a cleaning process using a cleaning solution to perform a reduction reaction with the metal oxide, such that metal-hydrogen bonds are formed on the surface of the conductive structure. The method further includes transferring the semiconductor wafer to a bonding chamber under vacuum for hybrid bonding. Embodiments of mechanisms for a hybrid bonding and a integrated system are also provided.

Growing community of inventors

Hsinchu County, Taiwan

Xiao-Meng Chen