Hon Hai Precision Industry Co., Ltd.

Tsinghua University

Xiao-Long Li

Ming Zhao

Li Hui Guo

Ming-Jie Cao

Da-Ming Zhuang

Shi-Lu Zhan

A sputtering target includes an indium cerium zinc oxide represented by InCeZnO, wherein x=0.5&#x2dc;2. A relative density of the sputtering target is larger than or equal to 90%. A bulk resistance of the sputtering target in a range from about 10&#x3a9;cm to about 10 &#x3a9;cm. A weight percentage of crystalline InCeZnOin the sputtering target is larger than 80%.

Sputtering target

A sputtering target includes an indium cerium zinc oxide represented by InCeZnO, wherein x=0.5&#x2dc;2. A method for making a sputtering target includes steps of: mixing indium oxide (InO) powder, cerium oxide (CeO) powder, and zinc oxide (ZnO) powder to form a mixture, a molar ratio of indium (In), cerium (Ce), and zinc (Zn) as In:Ce:Zn in the mixture is 2:(0.5 to 2):1; and sintering the mixture at a temperature in a range from about 1250&#xb0; C. to about 1650&#xb0; C.

Sputtering target and method for making the same

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Beijing, China

Xiao-Long Li