Zing Semiconductor Corporation

Xianliang Deng

Gang Wang

Hanyi Huang

Weimin Shen

Wee Teck Tan

The invention provides a semiconductor crystal growth device comprising a furnace body; a crucible; a pulling device; a horizontal magnetic field applying device; and a deflector, being barrel-shaped and disposed above the silicon melt in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot through the deflector in the vertical direction; wherein the bottom of the deflector has different thermal reflection coefficients at different positions, and the thermal reflection coefficient of the bottom of the deflector in the direction of the horizontal magnetic field is smaller than that in the direction perpendicular to the horizontal magnetic field. According to the semiconductor crystal growth device of the present invention, the temperature distribution inside the melt silicon and quality of the semiconductor crystal are improved.

Growing community of inventors

Shanghai, China

Xianliang Deng