Lam Research Corporation

Amazon Technologies, Inc.

Lam Research Corportation

Xiang Zhou

Yoshie Kimura

Ganesh Upadhyaya

Chen Xu

Duming Zhang

Mitchell Brooks

John Stephen Drewery

Radhika C Mani

Naveed Ansari

Si-Yi Yi Li

Kazi Sultana

Haseeb Kazi

Alex Paterson

Alexander Miller Paterson

Ying Wu

Tom A Kamp

Hao Chen

Noel Sun

Seokhwan Lee

Zhuoxian Wang

Teng Hooi Goh

Weiye Zhu

Zhaohong Han

Provided herein are methods and systems for reducing roughness of EUV resists and improving etched features. The methods may involve depositing a thin film on a patterned EUV resist having a stress level that is less compressive than a stress level of the patterned EUV resist. The resulting composite stress may reduce buckling and/or bulging of the patterned EUV resist.

Reducing roughness of extreme ultraviolet lithography resists

Systems and methods for synchronization of radio frequency (RF) generators are described. One of the methods includes receiving, by a first RF generator, a first recipe set, which includes information regarding a first plurality of pulse blocks for operating the first RF generator. The method further includes receiving, by a second RF generator, a second recipe set, which includes information regarding a second plurality of pulse blocks for operating a second RF generator. Upon receiving a digital pulsed signal, the method includes executing the first recipe set and executing the second recipe set. The method further includes outputting a first one of the pulse blocks of the first plurality based on the first recipe set in synchronization with a synchronization signal. The method includes outputting a first one of the pulse blocks of the second plurality based on the second recipe set in synchronization with the synchronization signal.

Synchronization of RF generators

Techniques for concurrent transmission of audio and ultrasound are described. In an example, a computing device generates, in a digital domain, mixed audio data from multiple sets of audio data, each set corresponding to a different audio channel. The computing device also generates, in the digital domain, ultrasound data, and generates serial data by providing the mixed audio data and the ultrasound data as different inputs to an I2S mixing module. In an analog domain, the computing device generates an output signal based at least in part on the serial data, and sends the output signal to a speaker.

Concurrent transmission of audio and ultrasound

Methods and apparatuses for critical dimension (CD) control of substrate features using integrated atomic layer deposition (ALD) and etch processes are described herein. Methods include etching to form a mask pattern of features on a substrate having a width that is less than a desired width of structures to be subsequently formed by the mask pattern of features, conformally depositing a passivation layer by ALD that increases the width of the mask pattern of features to the desired width, and etching a layer of the substrate to a desired depth to form the plurality of structures having the desired width.

Atomic layer deposition and etch in a single plasma chamber for critical dimension control

Methods and apparatuses for reducing roughness using integrated atomic layer deposition (ALD) and etch processes are described herein. In some implementations, after a mask is provided on a substrate, methods include depositing a conformal layer on the mask by ALD to reduce roughness and etching a layer underlying the mask to form patterned features having a reduced roughness. In some implementations, after a substrate is etched to a first depth to form features at the first depth in the substrate, methods include depositing a conformal layer by ALD on sidewalls of the features to protect sidewalls and reduce roughness during a subsequent etch process. The ALD and etch processes may be performed in a plasma chamber.

Atomic layer deposition and etch for reducing roughness

A method for etching a substrate includes performing, in a plasma chamber, a first etch of a substrate material using a plasma etch process. The first etch forms features to a first depth in the material. Following the first etch, the method includes performing, in the plasma chamber without removing the substrate from the chamber, an atomic layer passivation (ALP) process to deposit a conformal film of passivation over the mask and the features formed during the first etch. The ALP process uses a vapor from a liquid precursor to form passivation over the features and the mask. The method further includes performing, in the plasma chamber, a second etch of the material using the plasma etch process. The conformal film of passivation is configured to protect the mask and sidewalls of the features during the second etch. A plasma processing system also is described.

Integrated atomic layer passivation in TCP etch chamber and in-situ etch-ALP method

Methods and apparatuses for passivating a fin field effect transistor (FinFET) semiconductor device and performing a gate etch using integrated atomic layer deposition (ALD) and etch processes are described herein. Methods include performing a partial gate etch, depositing a passivation layer on exposed surfaces of semiconductor fins and a gate layer by ALD, and performing a final gate etch to form one or more gate structures of the FinFET semiconductor device. The etch, deposition, and etch processes are performed in the same plasma chamber. The passivation layer is deposited on sidewalls of the gate layer to maintain a gate profile of the one or more gate structures during etching.

Atomic layer deposition and etch in a single plasma chamber for fin field effect transistor formation

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Santa Clara, CA, United States of America

Xiang Zhou