Chartered Semiconductor Manufacturing Ltd (corporation)

Xian Bin Wang

Subramanian Balakumar

Juan Boon Tan

Liang Choo Hsia

Yi Liang Xu

Fan Zhang

Bei Chao Zhang

Tae Jong Lee

Wuping Liu

Kong Hean Lee

Kho Liep Chok

Zheng Zhou

Cuiyang Wang

In accordance with the objectives of the invention a new design and method for the implementation thereof is provided in the form of an 'oxide ring'. A conventional die is provided with a guard ring or sealing ring, which surrounds and isolates the active surface area of an individual semiconductor die. The 'oxide ring' of the invention surrounds the guard ring or sealing ring and forms in this manner a mechanical stress release buffer between the sawing paths of the die and the active surface area of the singulated individual semiconductor die.

Method of fabrication of a die oxide ring

A new method of fabricating shallow trench isolations has been achieved. A pad oxide layer is formed overlying a semiconductor substrate. A silicon nitride layer is deposited overlying the pad oxide layer. A protective layer is deposited overlying the silicon nitride layer. The protective layer, the silicon nitride layer, and the pad oxide layer are patterned to expose the semiconductor substrate where shallow trench isolations are planned. The semiconductor substrate is etched to form trenches for the planned shallow trench isolations. A large trench etching angle is used. The presence of the protective layer prevents loss of the silicon nitride layer during the etching. A trench filling layer is deposited overlying the protective layer and filling the trenches. The trench filling layer and the protective layer are polished down to complete the shallow trench isolations in the manufacture of the integrated circuit device.

Method to form shallow trench isolations

A new method to prevent oxide erosion in a metal plug process by employing a silicon nitride layer over the oxide is described. An oxide layer is deposited overlying a semiconductor substrate. A silicon nitride layer is deposited overlying the oxide layer. An opening is etched through the silicon nitride layer and into the oxide layer. A barrier metal layer is deposited overlying the silicon nitride layer and into the opening. A metal layer is deposited overlying the barrier metal layer. The metal layer and barrier metal layer are polished away using chemical mechanical polishing (CMP) with a polish stop at the silicon nitride layer. The metal layer forms a metal plug. The silicon nitride layer prevents erosion of the oxide layer during the polishing step to complete formation of a metal plug in the fabrication of an integrated circuit device.

Method for improving oxide erosion of tungsten CMP operations

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Singapore, Singapore

Xian Bin Wang