Taiwan Semiconductor Manufacturing Comp. Ltd.

Xi-Hong Chen

Chung-Shi Liu

Ming-Da Cheng

Wei-Yu Chen

Meng-Tse Chen

Yi-Da Tsai

Tao-Hua Lee

A semiconductor package may include a first substrate, a second substrate facing the first substrate, a plurality of first electrical connections disposed between the first substrate and the second substrate, and a first material disposed between the first substrate and the second substrate. The plurality of first electrical connections may electrically couple the first substrate and the second substrate to each other. The first material may surround each of the plurality of first electrical connections, and a width of the first material proximal the first substrate may be smaller than a width of the first material proximal the second substrate.

Semiconductor packages

A package-on-package ('PoP') structure and a method of forming are provided. The PoP structure may be formed by forming a first set of electrical connections on a first substrate. A first material may be applied to the first set of electrical connections. A second substrate may be provided having a second set of electrical connections formed thereon. The first set of electrical connections of the first substrate having the epoxy flux applied may be contacted to the second electrical connections of the second substrate. A reflow process may be performed to electrically connect the first substrate to the second substrate. The epoxy flux applied to the first electrical connections of the first substrate may prohibit electrical bridges or shorts from forming during the reflow process.

Methods and apparatus for package on package structures

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Luzhu, Taiwan

Xi-Hong Chen