Asm International N.v.

Xavier Pages

Vladimir Ivanovich Kuznetsov

Ernst H A Granneman

Cornelius A Van Der Jeugd

Herbert Terhorst

Gert-Jan Snijders

Pascal Gustaaf Vermont

Ernest H A Granneman

A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.

Methods of forming films in semiconductor devices with solid state reactants

A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.

Method for the heat treatment of substrates

Methods of forming silicide films in semiconductor devices

Growing community of inventors

Lovenjoel, Belgium

Xavier Pages