Honda Motor Co., Ltd.

Leland Stanford Junior University

Wonyoung Lee

Friedrich B Prinz

Timothy P Holme

Neil Dasgupta

James F Mack

Andrei Teodor Iancu

Stephen P Walch

Andrel Iancu

Area selective atomic layer deposition is provided by a method including the following steps. First, a substrate is provided. Second, a tip of a scanning probe microscope (SPM) is disposed in proximity to the surface of the substrate. An electrical potential is then established between the tip and the surface that cause one or more localized electrical effects in proximity to the tip. Deposition reactants for atomic layer deposition (ALD) are provided, and deposition occurs in a pattern defined by the localized electrical effects because of locally enhanced ALD reaction rates.

Field-aided preferential deposition of precursors

A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.

Prototyping station for atomic force microscope-assisted deposition of nanostructures

Growing community of inventors

Stanford, CA, United States of America

Wonyoung Lee