Stats Chippac Pte. Ltd.

WonJun Ko

JaEun Yun

Sungmin Song

DaeSik Choi

Jong Wook Ju

SeungYong Chai

SeongMin Lee

OhHan Kim

Taeg Ki Lim

Hye Ran Lee

GwangTae Kim

NamJu Cho

DeokKyung Yang

HunTeak Lee

DongSoo Moon

SeungYun Ahn

Oh Han Kim

Yeongbeom Ko

BoHan Yoon

KeoChang Lee

Kenny Lee

Ja Eun Yun

JoungUn Park

A semiconductor device has a substrate including a recess and a peripheral portion with through conductive vias. A first semiconductor die is mounted over the substrate and within the recess. A planar heat spreader is mounted over the substrate and over the first semiconductor die. The planar heat spreader has openings around a center portion of the planar heat spreader and aligned over the peripheral portion of the substrate. A second semiconductor die is mounted over the center portion of the planar heat spreader. A third semiconductor die is mounted over the second semiconductor die. First and second pluralities of bond wires extend from the second and third semiconductor die, respectively, through the openings in the planar heat spreader to electrically connect to the through conductive vias. An encapsulant is deposited over the substrate and around the planar heat spreader.

Semiconductor device and method of forming a low profile dual-purpose shield and heat-dissipation structure

A warpage test system uses a calibration block to calibrate the warpage test system over a temperature profile. The calibration block includes a first metal block bonded to a second metal block. The first metal block includes a first metal and a second different metal. The first metal block includes a CTE different than a CTE of the second metal block. The calibration block is disposed in the warpage test system. A warpage of the calibration block is measured over a temperature profile ranging from 28&#xb0; C. to 260&#xb0; C. A deviation between the measured warpage of the calibration block and a known thermal expansion of the calibration block over the temperature profile is recorded. The warpage measurement in a semiconductor package is compensated by the deviation between the measured warpage of the calibration block and the known thermal expansion or warpage of the calibration block over the temperature profile.

Semiconductor device and method of calibrating warpage testing system to accurately measure semiconductor package warpage

A semiconductor wafer contains a plurality of first semiconductor die. The semiconductor wafer is mounted to a carrier. A channel is formed through the semiconductor wafer to separate the first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. An encapsulant is deposited over the carrier and first semiconductor die and into the channel while a side portion and surface portion of the second semiconductor die remain exposed from the encapsulant. A first conductive via is formed through the encapsulant in the channel. A second conductive via is formed through the encapsulant over a contact pad of the first semiconductor die. A conductive layer is formed over the encapsulant between the first and second conductive vias. An insulating layer is formed over the conductive layer and encapsulant. The carrier is removed. An interconnect structure is formed over the first conductive via.

Semiconductor device and method of stacking semiconductor die in mold laser package interconnected by bumps and conductive vias

Simultaneous semiconductor packages can be produced using a dual-sided film-assist molding process. The process involves using a film or membrane having opposing surfaces for receiving un-encapsulated semiconductor packages on both surfaces. A slot can be formed in the film or membrane to facilitate introduction and passage of the encapsulation therethrough such that upon removal of the film or membrane, increased throughput and productivity of the completed semiconductor packages can be carried out to achieve considerable cost savings.

Dual-sided film-assist molding process

An integrated circuit package system includes: providing a singulated, layered structure equivalent in size to an integrated circuit die and having an adhesive layer, an electrical insulator layer, and a heat slug; attaching the integrated circuit die to a base; attaching bond wires to a top of the base for electrical connection between the integrated circuit die and the base; attaching the singulated, layered structure to the integrated circuit die wherein the bond wires are surrounded by the adhesive layer; and encapsulating the integrated circuit die and a portion of the heat slug with a molding compound.

Integrated circuit package system with wafer scale heat slug

An integrated circuit package system that includes: providing a first package including a first package first device and a first package second device both adjacent a first package substrate; and mounting and electrically interconnecting a second package over an electrical interconnect array formed on a substrate of the first package second device.

Integrated circuit package system employing multi-package module techniques

A method of manufacture of an integrated circuit packaging system includes: providing a base substrate; mounting a central integrated circuit over the base substrate; mounting a side package having a side package substrate along a peripheral region of the base substrate and laterally peripheral to the central integrated circuit with the side package substrate coplanar with the central integrated circuit; and encapsulating the central integrated circuit and the side package above the base substrate with a base encapsulation to form a planar surface over the central integrated circuit and the side package facing away from the base substrate.

Integrated circuit packaging system with collapsed multi-integration package and method of manufacture thereof

A method of manufacture of an integrated circuit packaging system includes: providing a package substrate having an outer pad at a substrate top side; forming a resist layer directly on the substrate top side, the resist layer having a resist top side with a channel array adjacent the outer pad exposed from the resist layer; mounting an integrated circuit having an active side facing the resist top side, the integrated circuit having a non-horizontal side adjacent the outer pad; and forming a dielectric between the active side and the resist top side, the dielectric having a fillet extended from the non-horizontal side to the substrate top side inside an inner extent of the channel array.

Integrated circuit packaging system with dielectric support and method of manufacture thereof

A method of manufacture of an integrated circuit packaging system includes: providing a substrate with a material layer including grooves in a fillet region that are substantially parallel and adjacent an integrated circuit; and forming a resin between the substrate and the integrated circuit that contacts a trench trace exposed by the grooves.

Integrated circuit packaging system with trenches and method of manufacture thereof

A semiconductor device has a build-up interconnect structure formed over an active surface of a semiconductor wafer containing a plurality of semiconductor die separated by a saw street. An insulating layer is formed over the interconnect structure. Bumps are formed over the interconnect structure. A protective coating material is deposited over the insulating layer and saw street. A lamination tape is applied over the coating material. A portion of a back surface of the semiconductor wafer is removed. A mounting tape is applied over the back surface. The lamination tape is removed while leaving the coating material over the insulating layer and saw street. A first channel is formed through the saw street extending partially through the semiconductor wafer. The coating material is removed after forming the first channel. A second channel is formed through the saw street and the mounting tape is removed to singulate the semiconductor wafer.

Semiconductor device and method of forming protective coating material over semiconductor wafer to reduce lamination tape residue

A method of manufacture of an integrated circuit packaging system includes: providing a package substrate; mounting an integrated circuit die on the package substrate; and attaching a heat spreader assembly, having a thermal adhesive layer formed therein, to the package substrate and the integrated circuit die.

Integrated circuit packaging system with heat spreader and method of manufacture thereof

An integrated circuit packaging system comprising: a base package substrate; a first integrated circuit die attached over the base package substrate; and an interposer having a recessed edge and a corner that extends to a singulation edge, the interposer mounted over the first integrated circuit die, the interposer having a recess gap between the recessed edge and the singulation edge.

Integrated circuit packaging system with interposer

An integrated circuit packaging system comprising: fabricating an interposer array having an access opening; fabricating a base package substrate sheet; attaching a first integrated circuit die over the base package substrate sheet; mounting the interposer array over the first integrated circuit die; and singulating a base package from the base package substrate sheet and the interposer array by cutting the access opening generally through the center.

An integrated circuit package system comprising: providing a base substrate; attaching a base integrated circuit die over the base substrate; forming a support over the base substrate near only one edge of the base substrate; and attaching a stack substrate over the support and the base integrated circuit die.

Growing community of inventors

Sungnam-si, South Korea

WonJun Ko