Infineon Technologies Ag

Infineon Technologies Austria Ag

Telair International Gmbh

Wolfgang Lehnert

Rudolf Berger

Roland Rupp

Hans-Joachim Schulze

Guenther Ruhl

Anton Mauder

Francisco Javier Santos Rodriguez

Michael Rogalli

Stefan Pompl

Raimund Foerg

Markus Meyer

Hermann Gruber

Johann Gatterbauer

Tobias Franz Wolfgang Hoechbauer

Harry Walter Sax

Michael Bernhard Sommer

Evelyn Napetschnig

Gerhard Metzger-Brueckl

Michael Stadtmueller

Mihai Draghici

Karsten Kellermann

Christian Rottmair

Franz Hirler

Helmut Strack

Werner Schustereder

Klemens Pruegl

Alexander Breymesser

Guenter Denifl

Martin Huber

Frank Dieter Pfirsch

Albert Birner

Carsten Ahrens

Manfred Schneegans

Bernhard Goller

Ulrich Krumbein

Helmut Brech

Oliver Häberlen

Bernhard Weidgans

Edmund Riedl

Carsten Schaeffer

Marko Swoboda

Uwe Hoeckele

Stefan Sedlmaier

Bernhard Knott

Rudolf Lehner

Oliver Humbel

Stefan Willkofer

Juergen Wagner

Angelika Koprowski

Kurt Matoy

Berthold Schuderer

Matteo Piccin

Manfred Frank

Günther Ruhl

Andreas Patzlsperger

Günter Denifl

Fabian Craes

Norbert Mais

Matthias Mueller

Tobias Hoechbauer

Verena Muhr

Patrick Hanekamp

Christian Hammer

Maik Lohmann

A power semiconductor device includes a semiconductor body; a first load terminal at the semiconductor body; and a second load terminal at the semiconductor body. The power semiconductor device is configured to conduct a load current between the first load terminal and the second load terminal. The first load terminal has a first side and a second side adjoining the semiconductor body. The first load terminal includes: at the first side, an atomic layer deposition (ALD) layer; at the second side, a base layer including copper; and between the ALD layer and the base layer, a coupling layer that includes copper-silicon-nitride (CuSiN).

Power semiconductor device and method of producing a power semiconductor device

A method of manufacturing a semiconductor package is provided. The method may include singulating a wafer including a plurality of dies fixed to an auxiliary carrier to generate dies having released side surfaces, covering at least the side surfaces of the dies with a passivation layer using a deposition process at a temperature below the melting temperature of the auxiliary carrier, keeping a gap between the passivation layers at the side surfaces of adjacent dies of the plurality of dies.

Method of manufacturing a semiconductor package, die, and die package

A semiconductor device and a method of forming a semiconductor device are provided. In an embodiment, the semiconductor device comprises a device region, an edge termination region surrounding the device region, a first metal feature in the edge termination region, a first conformal ion diffusion barrier layer over the first metal feature, and a first conformal chemical protection layer over the first conformal ion diffusion barrier layer.

Semiconductor device

A chip package is provided. The chip package may include at least one chip, an exposed metal region and a metal protection layer structure over the exposed metal region and configured to protect the metal region from oxidation. The protection layer structure includes a low-temperature deposited oxide, and a hydrothermally converted metal oxide layer over the protection layer structure.

Chip package and method of forming a chip package

A method for processing a wide band gap semiconductor wafer includes: depositing a support layer including semiconductor material at a back side of a wide band gap semiconductor wafer, the wide band gap semiconductor wafer having a band gap larger than the band gap of silicon; depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer; and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer comprising at least a part of the epitaxial layer, and a remaining wafer comprising the support layer.

Methods for processing a wide band gap semiconductor wafer using a support layer and methods for forming a plurality of thin wide band gap semiconductor wafers using support layers

A method for manufacturing a semiconductor device includes implanting gas ions in a donor wafer and bonding the donor wafer to a carrier wafer to form a compound wafer. The method also includes subjecting the compound wafer to a thermal treatment to cause separation along a delamination layer and growing an epitaxial layer on a portion of separated compound wafer to form a semiconductor device layer. The method further includes cutting the carrier wafer.

Method of manufacturing a template wafer

Methods for processing a semiconductor substrate are proposed. An example of a method includes forming cavities in the semiconductor substrate by implanting ions through a first surface of the semiconductor substrate. The cavities define a separation layer in the semiconductor substrate. A semiconductor layer is formed on the first surface of the semiconductor substrate. Semiconductor device elements are formed in the semiconductor layer. The semiconductor substrate is separated along the separation layer into a first substrate part including the semiconductor layer and a second substrate part.

Methods for processing a semiconductor substrate

A method of forming an aluminum oxide layer is provided. The method includes providing a metal surface including at least one metal of a group of metals, the group of metals consisting of copper, aluminum, palladium, nickel, silver, and alloys thereof. The method further includes depositing an aluminum oxide layer on the metal surface by atomic layer deposition, wherein a maximum processing temperature during the depositing is 280&#xb0; C., such that the aluminum oxide layer is formed with a surface having a liquid solder contact angle of less than 40&#xb0;.

Method of forming an aluminum oxide layer, metal surface with aluminum oxide layer, and electronic device

A wafer composite includes a handle substrate, an auxiliary layer formed on a first main surface of the handle substrate, and a silicon carbide structure formed over the auxiliary layer. The handle substrate is subjected to laser radiation that modifies crystalline material along a focal plane in the handle substrate. The focal plane is parallel to the first main surface. The auxiliary layer is configured to stop propagation of microcracks that the laser radiation may generate in the handle substrate.

Method of manufacturing a silicon carbide device and wafer composite including laser modified zones in a handle substrate

A method of forming a layer structure is provided. The method may include plasma-treating a metal surface with a hydrogen-containing plasma, thereby forming nucleophilic groups over the metal surface, and forming an organic layer over the metal surface, wherein the organic layer comprises silane and is covalently bonded to the nucleophilic groups.

Method of forming a layer structure, layer structure, method of forming a contact structure, method of forming a chip package, and chip package

A method for processing a wide band gap semiconductor wafer is proposed. The method includes depositing a non-monocrystalline support layer at a back side of a wide band gap semiconductor wafer, depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer, and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer including at least a part of the epitaxial layer, and a remaining wafer including the non-monocrystalline support layer.

Methods for processing a wide band gap semiconductor wafer, methods for forming a plurality of thin wide band gap semiconductor wafers, and wide band gap semiconductor wafers

A method for processing a silicon carbide wafer includes implanting ions into the silicon carbide wafer to form an absorption layer in the silicon carbide wafer. The absorption coefficient of the absorption layer is at least 100 times the absorption coefficient of silicon carbide material of the silicon carbide wafer outside the absorption layer, for light of a target wavelength. The silicon carbide wafer is split along the absorption layer at least by irradiating the silicon carbide wafer with light of the target wavelength to obtain a silicon carbide device wafer and a remaining silicon carbide wafer.

Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor device

A wafer composite is provided which includes an auxiliary substrate, a donor substrate and a sacrificial layer formed between the auxiliary substrate and the donor substrate. Functional elements of the semiconductor component are formed in a component layer, including at least one partial layer of the donor substrate. The auxiliary substrate is then separated from the component layer by heat input into the sacrificial layer.

Wafer composite and method for producing a semiconductor component

This application relates to a method for producing a semiconductor component, in which a wafer composite is provided. The wafer composite includes a donor substrate, an auxiliary substrate and a separation layer arranged between the auxiliary substrate and the donor substrate. The separation layer has a support structure and sacrificial material, which is formed laterally between elements of the support structure. The auxiliary substrate is separated from the donor substrate. The separation includes a selective removal of the sacrificial material in relation to the support structure.

Wafer composite and method for producing semiconductor components

Growing community of inventors

Lintach, Germany

Wolfgang Lehnert