Umicore Ag & Co Kg

Wolf Schorn

Ralf Karch

Angelino Doppiu

Eileen Woerner

Annika Frey

Joerg Sundermeyer

Andreas Rivas-Nass

Jörg Sundermeyer

Andreas Rivas Nass

Nicholas Rau

Henrik Schumann

David Grosse-Hagenbrock

Eileen Wörner

Susanne Herritsch

Andreas Rivas-nass

Metal complexes of formula (I) are described:[M(L)(L)(hydra)]  formula (I)

Metal complexes for gas-phase thin-film deposition

The invention relates to compounds in accordance with the general formula [Ru(arene)(R&#x2014;N&#x2550;CR&#x2014;CR&#x2550;N&#x2014;R)] or [Ru(arene)((R,R)N&#x2014;N&#x2550;CR&#x2014;CR&#x2550;N&#x2014;N(R,R))]. In this case, arene is selected from the group consisting of mononuclear and polynuclear arenes and heteroarenes. R, R, RH, Rand R-Rare independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl radical. It further relates to methods for the production of these compounds, compounds obtainable according to these methods, their use and a substrate having on a surface thereof a ruthenium layer or a layer containing ruthenium. In addition, the invention relates to a method for producing compounds [Ru(arene)X]2, wherein arene is selected from the group consisting of mononuclear and polynuclear arenes and X=halogen, compounds of this type obtainable according to this method, and their use. The aforementioned ruthenium(O) compounds can be produced in a simple, cost-effective and reproducible manner with a high degree of purity and good yield. Due to their high degree of purity, they are suitable for use as ruthenium(O) precursors.

Organometallic compounds for the manufacture of a semiconductor element or electronic memory

The invention relates to methods for the production of trialkylindium (InR), wherein the production takes place in a reaction mixture that contains at least one alkylindium halide, a trialkylaluminum (AlR), a carboxylate, and a solvent, wherein R is chosen independently of one another from C1-C4 alkyl, and X is chosen independently of one another from Cl, Br, and I.

Production of trialkylindium compounds in the presence of carboxylates

The invention relates to a method for the cost-effective and environmentally friendly production of alkyl indium sesquichloride in high yield and with high selectivity and purity. The alkyl indium sesquichloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapour deposition (MOCVD) or metal organic vapour phase epitaxy (MOVPE). The novel method according to the invention is characterised by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.

Method for producing alkyl-indium compounds and the use thereof

The invention relates to an improved process for inexpensive and environmentally benign preparation of trialkylgallium compounds of the general formula:RGain high yield and selectivity, where R is alkyl of 1 to 4 carbon atoms. Trialkylgallium is prepared according to the invention via the intermediate stage alkylgallium dichloride (RGaCl) or dialkylgallium chloride/alkylgallium dichloride mixture (RGaCl/RGaCl). The RGaClobtained or the RGaCl/RGaClmixture also forms part of the subject-matter of the present invention. The novel process of the present invention is notable for improved process management. The process intentionally makes substantial use of inexpensive starting materials and reagents of low environmental impact and so is also useful for the industrial scale. The trialkylgallium compounds obtained are very pure and so are particularly useful as organometallic precursor for metal-organic chemical vapor deposition (MOCVD) or metal-organic vapor phase epitaxy (MOVPE) in semiconductor and microsystem technology.

Method for producing trialkylgallium compounds and the use thereof

The invention relates to a method for the cost-effective and environmentally friendly production of alkyl indium sesquichloride in high yield and with high selectivity and purity. The alkyl indium sesquichloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapor deposition (MOCVD) or metal organic vapor phase epitaxy (MOVPE). The novel method according to the invention is characterized by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.

The invention relates to a method for the cost-effective and environmentally friendly production of dialkyl indium chloride in high yield and with high selectivity and purity. The dialkyl indium chloride produced according to the invention is particularly suitable, also as a result of the high purity and yield, for the production, on demand, of indium-containing precursors in high yield and with high selectivity and purity. As a result of the high purity, the indium-containing precursors that can be produced are particularly suitable for metal organic chemical vapor deposition (MOCVD) or metal organic vapor phase epitaxy (MOVPE). The novel method according to the invention is characterized by the improved execution of the method, in particular a rapid process control. Owing to targeted and extensive use of raw materials that are cost-effective and have a low environmental impact, the method is also suitable for use on an industrial scale.

The invention relates to new metal complexes having N-aminoamidinate ligands, more particularly metal complexes having N,N'-bis(dimethylamino)acetamidinate, N,N&#x2032;-bis(dimethylamino)formamidinate, N-dimethylaminoacetamidinate or N-dimethylamino-N&#x2032;-isopropyl-acetamidinate ligands as well as to their preparation and use. The metal complexes are characterized by a five-membered chelate ring. The metal complexes are formed with the metals from the main groups of the PTE, but also with transition-group elements such as tantalum (Ta), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu) or zinc (Zn), and also with precious metals such as palladium (Pd). The complexes of the invention find use as precursors for the preparation of functional layers by means of gas-phase thin-film processes such as CVD, MO-CVD and ALD. Additionally they may be used as catalysts for olefin hydroamination and for olefin polymerization.

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Giessen, Germany

Wolf Schorn