Sri International

Sarnoff Corporation

University of Iowa Research Foundation

Novatronix Corporation

Winston Kong Chan

Joseph H Abeles

Martin Kwakernaak

Alan Michael Braun

Hooman Mohseni

Joey John Michalchuk

Timothy James Davis

Gerard Argant Alphonse

Yigal Dov Blum

Matthew A Howard

Sterling Eduard McBride

Richard Sita

Christopher E Holland

Steven A Lipp

Sterling Eduardo McBride

Mark F Schutzer

Ashish Chaudhary

Michael G Kane

Marc Rippen

Viktor Borisovitch Khalfin

Ralph Doud Whaley, Jr

John W Hodges

David K Hui

David R Andersen

Chris Coretsopoulos

Alex Krasner

Haiyan An

Srinivasan Krishnamurthy

David Brent McQueen

David Capewell

Zane Alan Shellenbarger

A photodiode, such as a linear mode avalanche photodiode can be made free of excess noise via having a superlattice multiplication region that allows only one electrical current carrier type, such as an electron or a hole, to accumulate enough kinetic energy to impact ionize when biased, where the layers are lattice matched. A photodiode can be constructed with i) a lattice matched pair of a first semiconductor alloy and a second semiconductor alloy in a superlattice multiplication region, ii) an absorber region, and iii) a semiconductor substrate. A detector with multiple photodiodes can be made with these construction layers in order to have a cutoff wavelength varied anywhere from 1.7 to 4.9 μm as well as a noise resulting from a dark current at a level such that an electromagnetic radiation signal with the desired minimum wavelength cutoff can be accurately sensed by the photodiode.

Photodiodes without excess noise

Methods, systems, and apparatuses are described for a CMOS compatible substrate having multiple stacks of semiconductor layers. The multiple stacks, at least, each include i) a layer of a tellurium based semiconductor layer on top of ii) a porous silicon layer. The porous silicon layer is a compliant layer to accept structural defects from the tellurium based semiconductor layer into the porous silicon layer. The multiple stacks are grown on the CMOS compatible substrate.

Using a compliant layer to eliminate bump bonding

A system to manufacture a plurality of dies may include an etching tool, an electrically-conductive-adhesive-composition, a heat-applying-extraction-tool and a porous substrate cooperating with an evacuation component. The etching tool uses an ion beam that is configured to singulate a plurality of dies on a wafer with an ion etching process. The electrically-conductive-adhesive-composition is located between the wafer and a porous substrate carrying the wafer during the ion etching process. The electrically-conductive-adhesive-composition adheres the wafer to the porous substrate to keep the dies in place during the ion etching process. The electrically-conductive-adhesive-composition also aids in conducting electrons away from the wafer as a drain during the ion etching process. The heat-applying-extraction-tool applies heat to an individual die during a handling process of the manufacturing process in order to melt the electrically-conductive-adhesive-composition through the porous substrate to an evacuation component in order to then pick up an individual die singulated from the wafer.

Production of very small or thin dies

An integrated circuit having Radio Frequency Identification components and circuitry used for authentication is discussed. The RFID components and circuitry include two or more coils and corresponding electrical circuits that are tuned to use two or more different resonant frequencies including: a first resonant RF used for power generation and a second resonant RF used for data communication. The integrated circuit contains a unique signature that is used for the authentication with two or more aspects including i) a first aspect that is a programmed password in a memory embedded on the integrated circuit, and ii) a second aspect that is a unique, randomly generated code based upon a physical characteristic of the integrated circuit.

Authentication apparatus, system and methods using unclonable identifiers

The disclosure includes an outer electrode and an inner electrode. The outer electrode defines an inner volume and is configured to receive injected electrons through at least one aperture. The inner electrode positioned in the inner volume. The outer electrode and inner electrode are configured to confine the received electrons in orbits around the inner electrode in response to an electric potential between the outer electrode and the inner electrode. The apparatus does not include a component configured to generate an electron-confining magnetic field.

Compact electrostatic ion pump

A photodiode, such as a linear mode avalanche photodiode can be made free of excess noise via having a superlattice multiplication region that allows only one electrical current carrier type, such as an electron or a hole, to accumulate enough kinetic energy to impact ionize when biased, where the layers are lattice matched. A photodiode can be constructed with i) a lattice matched pair of a first semiconductor alloy and a second semiconductor alloy in a superlattice multiplication region, ii) an absorber region, and iii) a semiconductor substrate. A detector with multiple photodiodes can be made with these construction layers in order to have a cutoff wavelength varied anywhere from 1.7 to 4.9 &#x3bc;m as well as a noise resulting from a dark current at a level such that an electromagnetic radiation signal with the desired minimum wavelength cutoff can be accurately sensed by the photodiode.

A linear mode avalanche photodiode senses light and outputs electrical current by being configured to, generate a gain equal to or greater than 1000 times amplification while generating an excess noise factor of less than 3 times a thermal noise present at or above a non-cryogenic temperature due to the gain from the amplification. The linear mode avalanche photodiode detects one or more photons in the light by using a superlattice structure that is matched to suppress impact ionization for a first carrier in the linear mode avalanche photodiode while at least one of 1) increasing impact ionization, 2) substantially maintaining impact ionization, and 3) suppressing impact ionization to a lesser degree for a second carrier. The first carrier having its impact ionization suppressed is either i) an electron or ii) a hole; and then, the second carrier is the electron or the hole.

Linear mode avalanche photodiodes without excess noise

The invention pertains to the field of electronic devices and the preparation thereof. In an aspect is an electronic device comprising a nanocomposite of carbon nanodomains homogeneously embedded in an insulating ceramic matrix, wherein the size and distribution of carbon nanodomains is such that the nanocomposite has a permittivity of greater than or equal to 200.

High permittivity nanocomposites for electronic devices

The present disclosure relates to a diode laser and a method for producing the same. In one embodiment, the diode laser, comprises a passive pedestal layer structure, an active ridge layer structure positioned over the passive pedestal layer structure, a p-contact contacting a top side of the active ridge layer structure, a first n-contact disposed on a first side of the active ridge layer structure, a second n-contact disposed on a second side of the active ridge layer structure and, an n-final-metal layer connecting the first n-contact metal and the second n-contact metal, wherein the n-final-metal layer is continuous over the active ridge layer structure.

Single ridge N-P-N diode laser

A chip scale atomic clock is disclosed that provides a low power atomic time/frequency reference that employs direct RF-interrogation on an end-state transition. The atomic time/frequency reference includes an alkali vapor cell containing alkali atoms, preferably cesium atoms, flex circuits for physically supporting, heating, and thermally isolating the alkali vapor cell, a laser source for pumping alkali atoms within the alkali vapor cell into an end resonance state by applying an optical signal along a first axis, a photodetector for detecting a second optical signal emanating from the alkali vapor cell along the first axis, a pair of RF excitation coils for applying an RF-interrogation signal to the alkali atoms along a second axis perpendicular to the first axis, a pair of bias coils for applying a uniform DC magnetic field along the first axis, and a pair of Zeeman coils for applying a Zeeman interrogation signal to the alkali atoms and oriented and configured to apply a time-varying magnetic field along the second axis through the alkali vapor cell. Another flex circuit is used for physically supporting the laser source, for heating the laser source, and for providing thermal isolation of the laser source. The laser source can be a vertical cavity surface emitting laser (VSCEL). The bias coils can be Helmholtz coils.

Batch-fabricated, RF-interrogated, end transition, chip-scale atomic clock

A method of coupling a waveguide to a multi-layered active device structure on a substrate is described. The method includes forming a junction area by etching the active device structure to form a sloped etch profile with respect to the substrate, aligning multiple layers of the multi-layered active device structure via an etch stop adjacent the multi-layered active device structure, and depositing the waveguide over the etched active device structure, wherein a sloped active passive junction is formed at the junction area that reduces residual interface reflection in a resulting coupled device. Also described is a method for removing at least one laser layer in a sloped junction region forming passive amorphous silicon waveguides. This includes depositing a SiN layer for use as an etch mask, patterning a photoresist mask, patterning the SiN layer by reactive ion etching, stripping the photoresist mask, and etching the at least one laser layer.

Interface for a-Si waveguides and III/V waveguides

An optical system including: a substrate having a recess; and, a substantially planar, semiconductor waveguiding membrane suspended over the recess and having a thickness less than about 200 nm; wherein, the optical system supports a propagating optical mode having a majority of its energy external to the semiconductor waveguiding membrane.

Low optical overlap mode (LOOM) waveguiding system and method of making same

A method of fabricating a tunable quantum dot apparatus, comprising: forming multi-quantum wells sandwiched substantially between at least two barrier layers; spin coating a non-continuous mask onto at least one of said barrier layers; forming a gate material onto the mask, wherein the non-continuity of the mask substantially prevents formation of a continuous gate material layer; lifting off at least a portion of the gate material; self isolating the gate material; and, forming a top contact onto at least a portion of said barrier layers

Electrically tunable quantum dots and methods for making and using same

An instrument including a scannable mirror employs multimode optical fibers and an optical coupler. Modal dispersion, e.g., from the multimode optical fiber, is reduced by a method employing deconvolution. The scannable mirror may employ a mirror movable in an optical waveguide or an optical fiber wound on an expandable core.

Growing community of inventors

Princeton, NJ, United States of America

Winston Kong Chan