Applied Materials, Inc.

Other

Lam Research Corporation

Raytheon Company

Appiled Materials, Inc.

Wing Lau Cheng

Arnold Kholodenko

Semyon L Kats

Shamouil Shamouilian

Dennis Stanley Grimard

Alexander M Veytser

You Wang

Ananda H Kumar

Kadthala Ramaya Narendrnath

Surinder S Bedi

Kartik Ramaswamy

Andrew Nguyen

Yan Ye

Daniel John Hoffman

Hiroji Hanawa

Tetsuya Ishikawa

Senh Thach

Brian C Lue

Kwok Manus Wong

Helen Cheng, Legal Representative

Vijay D Parkhe

Frederick B Koehler

Dan Katz

Alvin Lau

Alex Veytser

Shamouil Shamoulian

A carrier structure for supporting a substrate when being processed by passing the carrier through a meniscus formed by upper and lower proximity heads is described. A method of manufacturing the carrier further described. The method includes forming a composite frame having a carbon fiber core, a top sheet, a bottom sheet, a layer of aramid fabric between the top sheet and the core and a second layer of aramid fabric between the bottom sheet and the core. The top sheet and the bottom are each formed from a polymer material. The method further includes forming an opening sized for receiving a substrate and providing a plurality of support pins extending into the opening for supporting the substrate within the opening. The opening is formed slightly larger than the substrate such that a gap exists between the substrate and the opening.

Method for manufacturing a hybrid composite wafer carrier for wet clean equipment

A support for a substrate processing chamber comprises a chuck having a substrate receiving surface, and a base comprising an upper wall comprising a recessed trench having (i) an attachment face at a first depth, and (ii) a fluid channel at a second depth. A lower wall is seated in the recessed trench and attached to the attachment face of the upper wall, to close the fluid channel. A fluid inlet is provided to supply a heat transfer fluid to the fluid channel and a fluid outlet provided to discharge the heat transfer fluid from the fluid channel.

Substrate support having fluid channel

A carrier structure for supporting a substrate when being processed by passing the carrier through a meniscus formed by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening, the opening being slightly larger than the substrate such that a gap exists between the substrate and the opening. The frame comprises a composite core, a top sheet, a bottom sheet, a layer of aramid fabric between the top sheet and the core and a second layer of aramid fabric between the bottom sheet and the core. The top sheet and the bottom sheet being formed from a polymer material. A method of manufacture is also described.

Hybrid composite wafer carrier for wet clean equipment

An extendable device for providing radiation occlusion and/or aero-thermal protection is disclosed. In various representative aspects, the present invention generally includes an extendable collar and a flexure configured to provide elastic properties (e.g., to facilitate stowage and/or deployment with respect to conformational disposition of the flexure). The flexure is coupled to a collar and is also coupled to the housing of an optical device.

Device and method for providing radiation occlusion and aero-thermal protection

A support for a substrate processing chamber comprises a fluid circulating reservoir comprising a channel having serpentine convolutions. A fluid inlet supplies a heat transfer fluid to the fluid circulating reservoir and a fluid outlet discharges the heat transfer fluid. In one version, the channel is doubled over to turn back upon itself.

Substrate support having heat transfer system

A support for a substrate processing chamber has upper and lower walls that are joined by a peripheral sidewall to define a reservoir. A fluid inlet supplies a heat transfer fluid to the reservoir. In one version, a plurality of protrusions extends into the reservoir to perturb the flow of the heat transfer fluid through the reservoir. In another version, the reservoir is an elongated channel having one or more of (i) serpentine convolutions, (ii) integral fins extending into the channel, (iii) a roughened internal surface, or (iv) a changing cross-section. A fluid outlet discharges the heat transfer fluid from the reservoir.

An apparatus for reducing by-product formation in a semiconductor wafer-processing chamber. In a first embodiment, the apparatus comprises a chuck having a chucking electrode and a radially extending peripheral flange. A collar is disposed over the peripheral flange defining a first gap therebetween, and circumscribes the chuck. A heater element is embedded within the collar and adapted for connection to a power source. In a second embodiment, the apparatus comprises a chuck having a chucking electrode and a radially extending peripheral flange, and a collar having a heater element embedded therein. The collar is disposed over the peripheral flange to define a gap therebetween, and circumscribes the chuck. Moreover, a pedestal having a gas delivery system therein is disposed below the chuck and collar. In a third embodiment, the apparatus comprises a chuck having a chucking electrode and a radially extending peripheral flange, a collar, and a waste ring having a heater element embedded therein. The waste ring is disposed over the peripheral flange defining a gap therebetween, and circumscribes the chuck. The collar is chucked to the waste ring, and the waste ring is chucked to a pedestal support. Moreover, the waste ring and pedestal each have a gas delivery system therein for regulating the temperature of the collar.

Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber

An electrical coupler comprises an inner connector having upper and lower ends, an insulative outer connector element circumscribing the inner connector, and a thermally conductive flange disposed over the upper end of the inner connector and the outer connector for conducting heat from the electrical conductor. The electrical conductor may be utilized in a substrate support for semiconductor wafer processing. The substrate support comprises a chuck body having an electrode embedded therein, and an upper male connector coupled to the electrode and protruding from said chuck body. A cooling plate having the electrical coupler is positioned proximate to the chuck body. The upper male connector is inserted in the electrical coupler, and a power source coupled to the lower portion of the electrical coupler chucks and biases a wafer to an upper surface of said chuck. The thermally conductive flange conducts and transfers heat generated from the upper male connector and electrical coupler to the cooling plate.

High temperature electrical connector

A substrate processing chamber has a substrate support to support a substrate, and an exhaust conduit about the substrate support. A first process gas distributor directs a first process gas, such as a non-reactive gas, about the substrate perimeter and toward the exhaust conduit at a first flow rate to form a curtain of non-reactive gas about the substrate. A second process gas distributor directs a second process gas, such as reactive CVD or etchant gas, toward a central portion of the substrate at a second flow rate which is lower than the first flow rate. A gas energizer energizes the first and second process gases in the chamber. A controller operates the substrate support, gas flow meters, gas energizer, and throttle valve, to process the substrate in the energized gas.

Process chamber having multiple gas distributors and method

A chamber for processing a substrate comprises a support including an electrode at least partially covered by a dielectric that is permeable to electromagnetic energy. The electrode may be chargeable to electrostatically hold the substrate , to couple energy to a gas in the chamber , or both. A base below the support comprises a slot that may be adapted to serve as a thermal expansion slot to reduce thermal stresses.

Substrate support tolerant to thermal expansion stresses

A method of fabricating a semiconductor wafer support chuck apparatus having a first sintered layer and a second sintered layer. The method comprising the steps of providing the first sintered layer having a plurality of gas distribution ports and providing the second sintered layer having a plurality of grooves. The first sintered layer is stacked on top of the second sintered layer, where a diffusion bonding layer is disposed between the first sintered layer and the second sintered layer. Thereafter, the stacked first and second sintered layers are resintered such that the diffusion bonding layer joins the first and second sintered layers together to form a semiconductor wafer support apparatus.

Method of fabricating a semiconductor wafer support chuck apparatus having small diameter gas distribution ports for distributing a heat transfer gas

An electrostatic chuck for holding a substrate comprises an electrostatic member made from a dielectric covering an electrode that is chargeable to electrostatically hold the substrate A base that includes a heater is joined to the electrostatic member The base may be made from a composite material, such as a porous ceramic infiltrated with the metal, and may be joined to the electrostatic member by a bond layer.

Electrostatic chuck having heater and method

A substrate support comprises first, second and third sections connected to one another by first and second bonds , one of the sections comprises a surface adapted to receive a substrate . The first bond comprises a first bonding material and the second bond comprises a second bonding material. In one version, the first bonding material is capable of bonding surfaces when heated to a first temperature and the second bonding material is capable of bonding surfaces when heated to a second temperature.

Substrate support having bonded sections and method

An electrostatic chuck for holding a substrate has an electrostatic member having a dielectric covering an electrode that is chargeable to electrostatically hold the substrate. The bond layer has a metal layer that is infiltrated or brazed between the electrostatic member and the base. The base may be a composite of a ceramic and metal, the composite having a coefficient of thermal expansion within about &plusmn;30% of a coefficient of thermal expansion of the electrostatic member. The base may also have a heater.

Electrostatic chuck bonded to base with a bond layer and method

An electrostatic chuck comprises an electrical connector which is connected to the electrode to conduct an electrical charge to the electrode The electrical connector comprises a refractory metal having a melting temperature of at least about 1500&deg; C., such as for example, tungsten, titanium, nickel, tantalum, molybdenum, or alloys thereof. Preferably, the electrical connector is bonded to the electrode by a metal having a softening temperature of less than about 600&deg; C., such as aluminum, indium, or low melting point alloys.

Growing community of inventors

Sunnyvale, CA, United States of America

Wing Lau Cheng