Lam Research Corporation

William S Kennedy

Robert A Maraschin

Thomas E Wicker

Alan M Schoepp

Andrew D Bailey, Iii

Gregory Sexton

Jerome S Hubacek

David E Jacob

John Lilleland

Yunsang Kim

Andreas Fischer

Peter K Loewenhardt

David Trussell

Joel M Cook

Albert J Lamm

Eric H Lenz

Andras Kuthi

Neil M Benjamin

Jian J Chen

James V Tietz

Dean Jay Larson

Enrico Magni

William M Denty, Jr

Robert C Hefty

Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice. In this method, any flow controller set point can be flowed at any time and at any chamber condition, such as during plasma processing operations. Gas supply systems are also disclosed.

Methods for verifying gas flow rates from a gas supply system into a plasma processing chamber

A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.

Configurable bevel etcher

A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support ring. A vacuum pump evacuates the vacuum region during operation. The vacuum chuck is operative to hold the substrate in place by the pressure difference between the top and bottom surfaces of the substrate. The pressure difference also generates a bending force to reduce the bending curvature of the substrate.

Bevel etcher with vacuum chuck

An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.

Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a multi-part electrode

A showerhead electrode assembly of a plasma processing apparatus includes a thermal control plate attached to a showerhead electrode, and a top plate attached to the thermal control plate. At least one thermal bridge is provided between opposed surfaces of the thermal control plate and the top plate to allow electrical and thermal conduction between the thermal control plate and top plate. A lubricating material between the thermal bridge and the top plate minimizes galling of opposed metal surfaces due to differential thermal expansion between the top plate and thermal control plate. A heater supported by the thermal control plate cooperates with the temperature controlled top plate to maintain the showerhead electrode at a desired temperature.

Showerhead electrode assembly for plasma processing apparatuses

A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The lower and upper electrode assemblies generate plasma for cleaning the bevel edge of the substrate disposed between the top and bottom surfaces during operation. The device also includes a mechanism for suspending the upper electrode assembly over the lower support and adjusting the tilt angle and horizontal translation of the bottom surface relative to the top surface.

Bevel etcher with gap control

A method of making an electrode assembly for a plasma processing apparatus includes securing a backing member to an electrode wherein first fastener members mounted in apertures in the backing member cooperate with second fastener members to hold the electrode assembly to a support member, such as a temperature-controlled top plate in a plasma processing chamber.

Method of making an electrode assembly for plasma processing apparatus

An electrode assembly for a plasma processing apparatus includes a backing member secured to an electrode. First fastener members mounted in apertures in the backing member cooperate with second fastener members to hold the electrode assembly to a support member, such as a temperature-controlled top plate in a plasma processing chamber.

Electrode assembly for plasma processing apparatus

A plasma processing chamber having a chamber liner and a liner support, the liner support including a flexible wall configured to surround an external surface of the chamber liner, the flexible wall being spaced apart from the wall of the chamber liner. The apparatus can include a heater thermally connected to the liner support so as to thermally conduct heat from the liner support to the chamber liner. The liner support can be made from flexible aluminum material and the chamber liner comprises a ceramic material. The flexible wall can include slots which divide the liner support into a plurality of fingers which enable the flexible wall to absorb thermal stresses.

Low contamination high density plasma etch chambers and methods for making the same

A plasma processing chamber including a ceramic liner in the form of ceramic tiles mounted on a resilient support member. The liner and other parts such as a gas distribution plate and a plasma screen can be made of SiC which advantageously confines the plasma and provides temperature control of the inner surfaces of the chamber. The liner can be heated by a heater which provides heat to the liner by thermal conduction. To remove excess heat from the liner, the resilient support can be an aluminum support frame which conducts heat from the liner to a temperature controlled member such as a top plate of the chamber. The support frame can include a continuous upper portion and a segmented lower portion which allows thermal stresses to be accommodated during processing of semiconductor substrates in the plasma chamber.

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Fremont, CA, United States of America

William S Kennedy