General Semiconductor, Inc.

Other

General Semiconductor of Taiwan, Ltd.

William John Nelson

Fwu-Iuan Hshieh

Koon Chong So

John Amato

Stanley Lai

Jack Lin

Shyan-I Wu

K R Lee

Alice Tseng

Larry Shen

A trench DMOS transistor device that comprises: (a) a substrate of a first conductivity type; (b) an epitaxial layer of first conductivity type over the substrate, wherein the epitaxial layer has a lower majority carrier concentration than the substrate; (c) a trench extending into the epitaxial layer from an upper surface of the epitaxial layer; (d) an insulating layer lining at least a portion of the trench; (e) a conductive region within the trench adjacent the insulating layer; (f) a body region of a second conductivity type provided within an upper portion of the epitaxial layer and adjacent the trench; (g) a source region of first conductivity type within an upper portion of the body region and adjacent the trench; and (h) one or more low resistivity deep regions extending into the device from an upper surface of the epitaxial layer. The low resistivity deep region acts to provide electrical contact with the substrate, which is a common drain region for the device. By constructing a trench DMOS transistor device in this fashion, source, drain and gate contacts can all be provided on a single surface of the device.

Trench DMOS device with improved drain contact

This invention is related to an apparatus for attaching resists and wafers to substrates, including: first and a second moving devices for moving substrates and wafers respectively; a first tank for containing an adhesive agent; a dispensing device which dispenses a predetermined amount of the adhesive agent at the central region of the wafer; a third moving device for placing the substrate on the wafer, a compressing device which compresses the substrate to squeeze out any possible air bubble existing within the adhesive agent between the substrate and the wafer; a second tank for containing the adhesive agent; a fourth moving device for moving the attached substrate and the wafer together to the second tank such that the complete area of the wafer at the side thereof opposite to the substrate is covered with the adhesive agent in an appropriate amount; a mold having a plurality of cavities arranged in a required pattern; a supplying device for providing a plurality of resists on the mold; a shake-and-load device which shakes the mold such that the resists may be positioned into the cavities thereof; an adherent tape for adhering the resists which are arranged in accordance with the pattern of the mold; the fourth moving device to move the substrate and the wafer together onto the resists and the adherent tape such that the resists are attached with the wafer by the adhesive agent thereon; and a wrapping device for moving the adherent tape and separating the adherent tape from the resists.

Apparatus for attaching resists and wafers to substrates

A leaded semiconductor device package for nonsoldering assembling is disclosed. In the package of the invention, both leads of a semiconductor device package are flattened, cut and bent by automatic machines on the bais of conventional packaging process. Unlike a conventional semiconductor device package which is electrically connected to a circuit by soldering, the flattened and bent parts of both leads of the semiconductor device package can be electrically connected to a circuit by elastically contacting and directly assembling without soldering.

Leaded semiconductor device package for use in nonsoldering assembling

Growing community of inventors

Danville, CA, United States of America

William John Nelson