Advanced Micro Devices Corporation

Other

Amd Inc.

William Jarrett Campbell

Anthony John Toprac

Thomas J Sonderman

Michael Lee Miller

Jeremy Sam Lansford

Craig William Christian

Christopher H Raeder

Terrence J Riley

H Jim Fulford

Christopher Allen Bode

Scott Gregory Bushman

Christopher A Bone

Elfido Coss, Jr

Michael R Conboy

Qingsu Wang

Terri A Couteau

Anatasia L Oshelski

Jeff Thompson

James Anthony Mullins

A method is provided, the method comprising measuring at least one parameter characteristic of processing performed on a workpiece in a processing step, and modeling the at least one characteristic parameter measured using a correlation model. The method also comprises applying the correlation model to modify the processing performed in the processing step.

Method for adjusting rapid thermal processing (RTP) recipe setpoints based on wafer electrical test (WET) parameters

A method and apparatus for controlling wafer thickness uniformity in a multi-zone vertical furnace is provided. The multi-zone furnace bakes a plurality of wafers within each zone for a first bake time. A film thickness of at least one wafer baked in each zone of the furnace is measured using a metrology tool. A film thickness optimization unit determines a deposition rate for the at least one wafer within each zone, with the deposition rate being determined as a function of the film thickness of the wafer and the first bake time. The film thickness optimization unit then determines a second bake time to bake a subsequent set of wafers, and the subsequent set of wafers is baked in the furnace for the second bake time.

Method and apparatus for controlling wafer thickness uniformity in a multi-zone vertical furnace

A method is provided, the method comprising measuring at least one parameter characteristic of rapid thermal processing performed on a workpiece in a rapid thermal processing step, and modeling the at least one characteristic parameter measured using a first-principles radiation model. The method also comprises applying the first-principles radiation model to modify the rapid thermal processing performed in the rapid thermal processing step.

Run-to-run control method for proportional-integral-derivative (PID) controller tuning for rapid thermal processing (RTP)

A method and an apparatus for controlling a deposition process in a manufacturing process. A process recipe setting step is performed. A process run of semiconductor devices is performed based upon the process recipe. Metrology data relating to the process run of semiconductor dev determination is made whether production results are within a predetermined tolerance level, based upon the metrology data. Process recipe settings are modified in response to a determination that the production results are within a predetermined tolerance level, based upon the metrology data. A processing tool is capable of receiving at least one control input parameter and a metrology data acquisition unit is interfaced with the processing tool and is capable of acquiring metrology data from the processing tool. A production data analysis unit is interfaced with the metrology data acquisition unit and is capable of analyzing the metrology data from the metrology data acquisition unit and a control input parameter adjustment unit is interfaced with the production data analysis unit and the processing tool and is capable of performing adjustments upon the control input parameter.

Method and apparatus for run-to-run control of deposition process

The present invention provides for a method and an apparatus for controlling manufacturing processes using a hierarchical system. A first lot of semiconductor devices is processed using a first set of control input parameters. The first set of control input parameters is stored in one of a plurality of hierarchical levels, the first set of control input parameters being available for processing of a second lot of semiconductor devices. Process data is acquired from the processing of the first lot of semiconductor devices. A second set of control input parameters is determined for a subsequent lot of semiconductor devices based upon the acquired process data. The second set of control input parameters is stored in one of a plurality of hierarchical levels, the first and second sets of control input settings being available for processing of a third lot of semiconductor devices.

Method and apparatus for performing run-to-run control in a batch manufacturing environment

A method for controlling wafer uniformity in a polishing tool includes providing a plurality of carrier heads, determining a signature for each of the carrier heads, and installing carrier heads with similar signatures in a polishing tool. A processing line includes a polishing tool and a processing tool. The polishing tool is adapted to polish wafers. The polishing tool includes a plurality of carrier heads, each carrier head having a polishing signature similar to the other carrier heads. The processing tool is adapted to process the polished wafers in accordance with a recipe. At least one parameter in the recipe is based on the polishing signatures of the carrier heads.

Method and apparatus for controlling wafer uniformity in a chemical mechanical polishing tool using carrier head signatures

A method for monitoring consumable performance in a processing tool comprises storing a performance model of the processing tool; receiving a consumable item characteristic of a consumable item in the processing tool; determining a predicted processing rate for the processing tool based on the consumable item characteristic and the performance model; determining an actual processing rate of the processing tool; and determining a replacement interval for the consumable item based on at least the actual processing rate. A processing system includes a processing tool and an automatic process controller. The processing tool is adapted to process wafers and includes a consumable item.

Method and apparatus for monitoring consumable performance

The present invention provides for a method and an apparatus for monitoring controller performance using statistical process control analysis. A manufacturing model is defined. A processing run of semiconductor devices is performed as defined by the manufacturing model and implemented by a process controller. A fault detection analysis is performed on the process controller. At least one control input signal generated by the process controller is updated. The apparatus of the present invention comprises: a processing controller; a processing tool coupled with the processing controller; a metrology tool interfaced with the processing tool; a control modification data calculation unit interfaced with the metrology and connected to the processing controller in a feedback manner; a predictor function interfaced with the processing controller; an statistical process control analysis unit interfaced with the predictor function and the processing tool; and a results versus prediction analysis unit interfaced with the statistical process control analysis unit and connected to the processing controller in a feedback manner.

Method and apparatus for monitoring controller performance using statistical process control

The present invention provides for a method and an apparatus for interfacing a statistical process control system with a manufacturing control system. A manufacturing model is defined. A processing run of semiconductor devices is processed in a manufacturing facility as defined by the manufacturing model. An advanced process control analysis is performed on the processed semiconductor devices. A statistical process control analysis is performed on the processed semiconductor devices. The manufacturing facility is modified in response to the advanced process control analysis and the statistical process control analysis.

Method and apparatus for interfacing a statistical process control system with a manufacturing process control framework

A method comprising determining a polishing profile produced by a polishing tool and manufacturing a process layer with a surface profile prior to polishing operations based upon the determined polishing profile of the polishing tool.

Method for adjusting incoming film thickness uniformity such that variations across the film after polishing minimized

The present invention provides for a method and an apparatus for automatic routing of semiconductor devices within a manufacturing area. Performance of a plurality of manufacturing tools is tracked while processing semiconductor devices. At least one optimal combination of the manufacturing tools is determined based upon the tracked performance of the manufacturing tools. A queuing system is implemented to attain the optimal combination of the manufacturing tools. A dispatch system is deployed in response to the queuing system for routing the semiconductor devices within the manufacturing area.

Method and apparatus for automatic routing for reentrant processes

The present invention provides for a method and an apparatus for running metrology standard wafer routes for calibrating metrology data. A processing order for a run of semiconductor devices is determined. A metrology route based upon the processing order is determined. A metrology standard device is routed through the metrology route. Measurement data relating to the metrology standard device being routed though the metrology route is acquired. Metrology data processing upon the acquired measurement data is performed.

Method and apparatus for running metrology standard wafer routes for cross-fab metrology calibration

A method for filling a trench is provided. A wafer having at least a first layer formed thereon is provided. A trench is formed in the first layer. The depth of the trench is measured. A target thickness is determined based on the depth of the trench. A second layer of the target thickness is formed over the trench. A processing line includes a trench etch tool, a first metrology tool, a trench fill tool, and an automatic process controller. The trench etch tool is adapted to form a trench in a first layer on a wafer. The first metrology tool is adapted to measure the depth of the trench. The trench fill tool is adapted to form a second layer over the first layer based on an operating recipe. An automatic process controller is adapted to determine a target thickness based on the depth of the trench and modify the operating recipe of the trench fill tool based on the target thickness.

Apparatus for filling trenches

A method is provided for manufacturing, the method including processing a first workpiece in a nitride processing step and measuring a thickness of a field oxide feature formed on the first workpiece. The method also includes forming an output signal corresponding to the thickness of the field oxide feature. In addition, the method includes feeding back a control signal based on the output signal to adjust processing performed on a second workpiece in the nitride processing step to adjust a thickness of a field oxide feature formed on the second workpiece toward at least a predetermined threshold value.

Growing community of inventors

Austin, TX, United States of America

William Jarrett Campbell