Air Products and Chemicals, Inc.

Versum Materials Us, LLC

William Jack Casteel, Jr

Sergei Vladimirovich Ivanov

Wade Hampton Bailey, Iii

Tianniu Chen

Wen Dar Liu

Garret Chi-Ho Lau

Erin Marie Sorensen

Seiji Inaoka

Timothy Christopher Golden

Guido Peter Pez

Roger Dean Whitley

Yi-Chia Lee

Robert Quinn

Madhukar Bhaskara Rao

Charles G Coe

Mohammad Ali Kalbassi

Gene Everad Parris

Fred William Taylor

Shubhra Jyoti Bhadra

Paul Anthony Wright

Rajiv Krishan Agarwal

Qiao Zhao

Michael Ulman

Marissa Ann Bonanno

Geoffrey John Ochs

Christopher Robert Bongo

Magdalena M Lozinska

Raymond Nicholas Vrtis

Jeffrey Raymond Hufton

Robert George Syvret

Reno Pesaresi

Brenda Faye Ross

Xukun Luo

Krishnakumar Jambunathan

Kathleen Esther Theodorou

Reno Joseph Pesaresi, Jr

Mark Richard Brown

Frank Michael Prozonic

Guarav Kumar

Venkataramanan Ravi

Garrett Chi-Ho Lau

Elizabeth M Seibel

Elliott L Bruce

Charles Gardner Coe

Paula A Wright

Trace hydrogen may be removed from a dry gas by passing the dry gas at a temperature from about 0&#xb0; C. to about 60&#xb0; C. through at least one layer of a first hopcalite catalyst to produce product gas that is at least substantially free of hydrogen, wherein the first hopcalite catalyst has a molar ratio of copper to manganese of more than 0.55. Advantages include increase hydrogen capacity, lower feed and regeneration temperatures and lower sensitivity to carbon dioxide than equivalent processes using standard hopcalite catalyst having a Cu/Mn molar ratio from 0.45 to 0.55.

Removal of hydrogen impurity from gas streams

An adsorbent for removing COfrom a gas mixture, the adsorbent comprising alumina and a carbonate compound where the carbonate to alumina IR absorbance intensity ratio is reduced by washing the adsorbent with water. The disclosure also describes a method of making adsorbent particles, process for removing COfrom a gas mixture using the adsorbent, and an adsorption unit using the adsorbent.

Alkali-promoted activated alumina adsorbent

Composition, method and system for PVD TiN hard mask removal from 28/20 nm pattern wafers have been disclosed. The composition uses peroxide as oxidizing agent for PVD TiN hard mask removal under slightly basic conditions. The composition comprises bulky or long chain organic amines or polyalkylamine to improve removal/etching selectivity of PVD TiN vs CVD TiN. The composition further comprises long chain organic acids or amines to maintain Co compatibility.

TiN hard mask and etch residue removal

Disclosed are novel, as-crystallized RHO zeolite compositions with improved uniformity in morphology. These RHO compositions are useful for preparing cation-exchanged RHO zeolites that can be used as adsorbents for oxygen and/or nitrogen with improved properties. The adsorbents can be used in pressure swing adsorption processes for selectively adsorbing oxygen and/or nitrogen from feed streams such as an air stream or crude argon stream. Also disclosed are novel methods of preparing RHO zeolites with improved morphology control.

RHO zeolites and method of making the same

A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a fluoride ion source, an alkanolamine, sulfuric acid, and an organic acid. The compositions effectively remove the copper and cobalt-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.

Cleaning formulations

Disclosed herein are novel RHO zeolites useful as kinetically selective adsorbents for oxygen and/or nitrogen. The adsorbents can be used in pressure swing adsorption processes for selectively adsorbing oxygen and/or nitrogen from feed streams such as an air stream or crude argon stream. Also disclosed are novel methods of preparing RHO zeolites, including in particular mixed-cation RHO zeolites.

RHO adsorbent compositions, methods of making and using them

Disclosed herein are new processes for adsorbing oxygen using adsorbent compositions comprising RHO zeolites kinetically selective for oxygen. The RHO zeolites can be used in pressure swing adsorption processes for separating oxygen from oxygen containing streams, such as for, but not limited to, purifying a crude argon feed stream or separating oxygen from an air feed stream.

Processes using improved RHO adsorbent compositions

Formulations for stripping titanium nitride hard mask and removing titanium nitride etch residue comprise an amine salt buffer, a non-ambient oxidizer, and the remaining being liquid carrier includes water and non-water liquid carrier selected from the group consisting of dimethyl sulfone, lactic acid, glycol, and a polar aprotic solvent including but not limited to sulfolanes, sulfoxides, nitriles, formamides and pyrrolidones. The formulations have a pH &#x3c;4, preferably &#x3c;3, more preferably &#x3c;2.5. The aqueous formulations having water as liquid carrier and semi-aqueous formulation having water and non-polar aprotic solvent(s) further contain acidic fluoride. The formulations offer high titanium nitride etch rates while provide excellent compatibility towards W, AlN, AlO, and low k dielectric materials. The formulations may comprise weakly coordinating anions, corrosion inhibitors, and surfactants. Systems and processes use the formulations for stripping titanium nitride hard mask and removing titanium nitride etch residue.

Selectively removing titanium nitride hard mask and etch residue removal

A composition for cleaning integrated circuit substrates, the composition comprising: water; an oxidizer comprising an ammonium salt of an oxidizing species; a corrosion inhibitor comprising a primary alkylamine having the general formula: R'NH, wherein R&#x2032; is an alkyl group containing up to about 150 carbon atoms and will more often be an aliphatic alkyl group containing from about 4 to about 30 carbon atoms; optionally, a water-miscible organic solvent; optionally, an organic acid; optionally, a buffer species; optionally, a fluoride ion source; and optionally, a metal chelating agent.

Stripping compositions having high WN/W etching selectivity

Treatment compositions and methods of treating the surface of a substrate by using the treatment composition, and a semiconductor or MEMS substrate having the treatment composition thereon.

Composition for treating surface of substrate, method and device

TiN hard mask and etch residual removal

An adsorbent having a composition comprising at least 90% chabazite where the chabazite is a single phase chabazite having an Si/Al ratio of 1.2 to 1.8, the chabazite includes a mixture of at least two types of cations, and each of the at least two types of cations are in a molar ratio relative to Al of at least 0.05.

Modified chabazite adsorbent compositions, methods of making and using them

Etching compositions and method of using the etching compositions comprising potassium hydroxide; one or more than one additional alkaline compounds selected from the group consisting of TEAH, TMAF and NHOH; and water; or etching compositions comprising one or more than one inorganic alkali basic hydroxides selected from the group consisting of potassium hydroxide, cesium hydroxide, sodium hydroxide, rubidium hydroxide, or lithium hydroxide; optionally one or more than one additional alkaline compounds; water; and optionally one or more corrosion inhibitors; wherein the composition preferentially etches silicon present on a substrate as compared to silicon dioxide present on said substrate.

Etchant solutions and method of use thereof

The disclosure relates to new compositions comprising an, BFHanion that may be prepared chemically or electrochemically by oxidation of BFHsalts. This anion can be generated electrochemically in a voltammetry experiment, or by chemically by treatment of the (2&#x2212;) anions with powerful oxidants such as XeF2 or NO2(+) salts. The new compositions can be used as 1 electron chemical oxidants and in electrochemical cells such as lithium ion batteries where their formation at elevated potential can serve to limit the upper limit of voltage during the overcharge of such a cell.

Dodecaborate salt radical anion compositions and methods for making and using such compositions

Growing community of inventors

Fountain Hill, PA, United States of America

William Jack Casteel, Jr