Advanced Technology Materials, Inc.

Entegris, Inc.

William Hunks

Chongying Xu

Jeffrey F Roeder

Tianniu Chen

Thomas H Baum

Philip S H Chen

Matthias Stender

Bryan Clark Hendrix

Gregory T Stauf

Weimin Li

Steven M Bilodeau

Scott L Battle

David Walter Peters

Thomas M Cameron

Melissa A Petruska

Leah Maylott

Oleg Byl

Richard S Ray

Steven Lippy

Ruben Remco Lieten

Julie Cissell

Philip SH Chen

A process for forming cobalt on a substrate, comprising: volatilizing a cobalt precursor of the disclosure, to form, a precursor vapor: and contacting the precursor vapor with the substrate under vapor deposition conditions effective for depositing cobalt on the substrate from the precursor vapor, wherein the vapor deposition conditions include temperature not exceeding 200&#xb0; C., wherein: the substrate includes copper surface and dielectric material, e.g., ultra-low dielectric material. Such cobalt deposition process can be used to manufacture product articles in which the deposited cobalt forms a capping layer, encapsulating layer, electrode, diffusion layer, or seed for electroplating of metal thereon, e.g., a semiconductor device, flat-panel, display, or solar panel. A cleaning composition containing base and oxidizing agent components may be employed to clean the copper prior to deposition of cobalt thereon, to achieve substantially reduced defects in the deposited cobalt.

Cobalt deposition selectivity on copper and dielectrics

An organotitanium compound selected from the group consisting of:  Such organotitanium compounds are usefully employed in vapor deposition processes for depositing titanium on substrates, e.g., in the manufacture of microelectronic devices and microelectronic device precursor structures.

Cyclopentadienyl titanium alkoxides with ozone activated ligands for ALD of TiO2

A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO/SiOtrench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

Precursors for silicon dioxide gap fill

A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.

Fluorine free tungsten ALD/CVD process

Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of GeSbTechalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Tellurium compounds useful for deposition of tellurium containing materials

A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe); Ti(NMeEt); Ti(NEt);TiCl4; tBuN&#x2550;Nb(NEt); tBuN&#x2550;Nb(NMe); t-BuN&#x2550;Nb(NEtMe); t-AmN&#x2550;Nb(NEt); t-AmN&#x2550;Nb(NEtMe); t-AmN&#x2550;Nb(NMe); t-AmN&#x2550;Nb(OBu-t); Nb-13; Nb(NEt); Nb(NEt); Nb(N(CH)); Nb(OC2H); Nb(thd)(OPr-i); SiH(OMe); SiCU; Si(NMe); (MeSi)NH; GeRx(OR)wherein x is from 0 to 4, each Ris independently selected from H or C-Calkyl and each Ris independently selected from C-Calkyl; GeCl; Ge(NR)wherein each Ris independently selected from H and C-Calkyl; and (RGe)NH wherein each Ris independently selected from C-Calkyl; bis(N,N'-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Doped zirconium oxide materials of the present disclosure are usefully employed in ferroelectric capacitors and dynamic random access memory (DRAM) devices.

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An ion implantation method, in which a dopant source composition is ionized to form dopant ions, and the dopant ions are implanted in a substrate. The dopant source composition includes cluster phosphorus or cluster arsenic compounds, for achieving P- and/or As-doping, in the production of doped articles of manufacture, e.g., silicon wafers or precursor structures for manufacturing microelectronic devices.

Cluster ion implantation of arsenic and phosphorus

Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Antimony and germanium complexes useful for CVD/ALD of metal thin films

Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of GeSbTechalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Antimony compounds useful for deposition of antimony-containing materials

A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350&#xb0; C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

Low temperature deposition of phase change memory materials

Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of A GeSbTechalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

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Waterbury, CT, United States of America

William Hunks