Motorola Corporation

William David Darlington

Wesley Phillip Graff

Douglas J Dopp

Freddie Cumpian

A process for forming via openings (24) between two aluminum-containing interconnects (15) which includes removing a veil material (22) formed during etching of an insulating layer (12), where the veil material (22) is then removed by a combination process of a first dry etch followed by an aqueous organic solvent exposure. The first dry etch uses oxygen containing and fluorine-containing gases, and is performed during the resist removal. This combination process effectively removes the veil (22), even for the heaviest of veil formation, without adversely affecting the insulating layer (12) or the underlying interconnect (15) that includes aluminum. The temperature of the aqueous organic solvent may be reduced, decreasing the amount of volatile organic compound emissions from the solvent while maintaining solvent strength.

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Leander, TX, United States of America

William David Darlington