E.i. Dupont De Nemours and Company

William Borland

Keiichiro Hayakawa

Jerome D Smith

Takeshi Sato

A thick film resistor composition with a low length effect of TCR is provided. The thick film resistor composition containing at least one of an oxide of ruthenium and a ruthenium pyrochlore oxide as a conducting component, characterized in that the composition having 0.02-5.0 wt. % of silver incorporated therein.

Thick film resistor composition containing pyrochlore and

To provide a thick film resistor involving small variations in resistance and TCR during the firing step and a low thermal coefficient of expansion. A thick film resistor composition containing 5-30 wt. % of a ruthenium pyrochlore oxide and 10-90 wt. % of a glass binder, wherein (1) the ruthenium pyrochlore oxide is PbRuO.sub.3, (2) the glass binder is a glass which contains a first glass containing 61-85 wt. % of PbO, 10-36% of SiO.sub.2 and 0-2 wt. % of B.sub.2 O.sub.3, the total content of the PbO, SiO.sub.2 and B.sub.2 O.sub.3 accounting for 95 wt. % or more of the first glass, and in which 2-20 wt. % of B.sub.2 O.sub.3 is contained in the entire glass binder, and (3) the first glass accounts for 5-30 wt. % of the thick film resistor composition, and the weight ratio of the ruthenium pyrochlore oxide to the first glass is 5:30-60:40.

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Kanagawa, Japan

William Borland