Asml Netherlands B.v.

Willem Seine Christian Roelofs

Hakki Ergün Cekli

Weitian Kou

Michiel Kupers

Erik Henri Adriaan Delvigne

Wendy Johanna Martina Van De Ven

Alexander Ypma

Cédric Désiré Grouwstra

Marc Hauptmann

Erik Johannes Maria Wallerbos

Stefan Cornelis Theodorus Van Der Sanden

David Frans Simon Deckers

Lydia Marianna Vergaij-Huizer

Manuel Giollo

Iryna Dovbush

Patricius Aloysius Jacobus Tinnemans

Franciscus Godefridus Casper Bijnen

Edo Maria Hulsebos

Ralph Brinkhof

Henricus Johannes Lambertus Megens

Maikel Robert Goosen

Hadi Yagubizade

Loek Johannes Petrus Verhees

Manouk Rijpstra

Matthijs Cox

Ahmet Koray Erdamar

Tran Thanh Thuy Vu

Boris Menchtchikov

Elliott Gerard McNamara

Emil Peter Schmitt-Weaver

Masashi Ishibashi

Rizvi Rahman

Sudharshanan Raghunathan

Maaike Van't Westeinde

Maurits Van Der Schaar

Richard Johannes Franciscus Van Haren

Wim Tjibbo Tel

Stefan Hunsche

Reiner Maria Jungblut

Leon Paul Van Dijk

Maaike Van T Westeinde

Hakki Ergun Cekli

A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.

Methods of determining corrections for a patterning process, device manufacturing method, control system for a lithographic apparatus and lithographic apparatus

Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.

Method of obtaining measurements, apparatus for performing a process step, and metrology apparatus

A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.

Focus and overlay improvement by modifying a patterning device

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

Lithographic method

A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.

Methods of determining corrections for a patterning process

A method for determining one or more optimized values of an operational parameter of a sensor system configured to measure a property of a substrate is disclosed. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameter values for the plurality of substrates using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameter values; and determining the one or more optimized values of the operational parameter based on the comparing.

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Deurne, Netherlands

Willem Seine Christian Roelofs