Aixtron Se

Wilhelm Josef Thomas Krücken

Adam Boyd

Fred Michael Andrew Crawley

Honggen Jiang

Francisco Ruda Y Witt

Marcel Kollberg

Peter Sebald Lauffer

Markus Deufel

Mike Pfisterer

A susceptor for a CVD reactor includes a bearing surface for supporting a substrate holder. A carrier gas is fed into an inner radial zone, in order to floatingly cushion a substrate holder supported above the bearing surface. The gas fed into the inner radial zone leaves a second radial zone through discharge channels and to a slight extent through a gap surrounding the second radial zone and assigned to a third radial zone. The cross-sectional area of the discharge channels and the radial length of the gap are dimensioned such that the volumetric flow of the gas through the discharge channels is greater than through the gap if the latter has a gap height of 200 μm.

Susceptor of a CVD reactor

A CVD reactor includes a gas inlet member having a circular outline, and a susceptor that can be heated by a heating device. The gas inlet member has a cooled ceiling panel with outlet openings. The CVD reactor further comprises a shield plate, which adjoins the ceiling panel and has a circular outline. The shield plate has a central zone, an annular zone surrounding the central zone, having a rear side that points toward the ceiling panel, and a flat gas outlet surface pointing toward the process chamber, in which gas outlet openings terminate. The rear side in the central zone defines a rear plane running parallel to the gas outlet surface. The shield plate has a material thickness between 3 to 12 mm, and that the shield plate is spaced apart from the ceiling plate by a gap having a height between 0.3 to 1 mm.

Method for using shield plate in a CVD reactor

Shield plate for a CVD reactor

A CVD reactor includes a gas inlet element for introducing a process gas into a process chamber arranged between a process chamber cover and a susceptor. The gas inlet element contains at least one metal surface that comes into contact with the process gas. The metal surface has a passivation layer which prevents the metal surface from flaking due to exposure to one or more reactive gases. Cooling channels are arranged such that the passivation layer is maximally heated to 100&#xb0; C. in a cleaning step in which chlorine is introduced into the process chamber and the susceptor is heated to at least 700&#xb0; C. At the same time, the passivation layer is formed by chemically reacting a metal-organic compound with the metal atoms of the metal surface. The cleaning gas inlet openings are arranged such that the cleaning gas comes into contact with the metal surface that has the passivation layer.

CVD reactor and method for cleaning a CVD reactor

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Aachen, Germany

Wilhelm Josef Thomas Krücken