Lam Research Corporation

Ontrak Systems, Inc.

Intel Corporation

Watkins- Johnson Company

Genus, Inc.

Wilbur C Krusell

Rahul Jairath

Erik H Engdahl

Saket Chadda

Diane J Hymes

Anil K Pant

Jiri Pecen

Yuexing Zhao

Liming Zhang

John Martin De Larios

Mike Ravkin

John M deLarios

Lynn S Ryle

Glenn W Travis

David L Thrasher

Michael Ravkin

Andrew J Nagengast

Mansour Moinpour

Mohsen Salek

Edward T Ferri, Jr

Young C Park

Donald E Anderson

Xiuhua Zhang

James Bagley

Jerauld J Cutini

Robert G Boehm, Jr

Kamal Mishra

Jim Keller

Glen Travis

Lane L Larson

Albert M Saenz

William G Drapak

Tom Bramblett

Hoang Viet Nguyen

Igor J Malik

Dah-Bin Kao

Brian Scott Thornton

Ben Mooring

Michael A McNeilly

Daniel M Dobkin

Chiko Fan

Mark A Simmons

Lloyd J LaComb, Jr

Randall L Green

John Fielden

Glenn L Nobinger

James P Garcia

Frederick F Walker

Jose F Casillas

Ralph K Manriquez

Hoang T Nguyen

A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

Methods and apparatus for cleaning semiconductor substrates after polishing of copper film

An apparatus for chemically mechanically planarizing a semiconductor wafer is disclosed having a continuous polishing strip with first side having a fixed abrasive surface and a second side opposite the first side. In one embodiment, a first drive roller holds a first end of the polishing strip, a second drive roller holds a second end of the polishing strip, and a pair of support rollers contacts the second side of the polishing strip on either end of a polishing strip support. A drive motor is operably connected to the first and second drive rollers for moving the polishing strip in a linear, bi-directional manner.

Linear reciprocating disposable belt polishing method and apparatus

An integrated pad and belt for polishing a surface comprising a belt integrated with a polishing pad that forms a seamless polishing surface.

Integrated pad and belt for chemical mechanical polishing

An apparatus and method for in-situ monitoring of thickness during chemical-mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring channel. A film thickness monitor (comprising an ellipsometer, a beam profile reflectometer, or a stress pulse analyzer) views the substrate through the monitoring channel to provide an indication of the thickness of a film carried by the substrate. This information can be used to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.

Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing

A method for preparing a semiconductor wafer surface is provided which includes providing a plurality of source inlets and a plurality of source outlets and applying isopropyl alcohol (IPA) vapor gas through the plurality of source inlets to the wafer surface when the plurality of source inlets and outlets are in close proximity to the wafer surface. The method also includes applying a fluid through the plurality of source inlets to the wafer surface while applying the IPA vapor gas, and removing the applied IPA vapor gas and fluid from the wafer surface through the plurality of source outlets.

Methods for wafer proximity cleaning and drying

A system is provided for use in semiconductor wafer cleaning operations. The cleaning system has a top cap and a bottom cap. The top cap seals on a top surface contact ring of a wafer, and the bottom cap seals on a bottom surface contact ring of the wafer. The wafer is held between the top cap and the bottom cap. An edge clean roller is used for cleaning an edge of the wafer. A drive roller is configured to rotate the wafer, the top cap, and the bottom cap. The edge clean roller rotates at a first velocity and the drive roller rotates at a second velocity so as to facilitate an edge cleaning of the wafer by the edge clean roller.

Single wafer residue, thin film removal and clean

A system and method for planarizing a plurality of semiconductor wafers is provided. The method includes the steps of processing each wafer along the same process path using at least two polishing stations to each partially planarize the wafers. The system includes an improved process path exchanging a detachable wafer carrying head with spindles at each processing point and conveying the detached wafer carrying heads in a rotary index table between processing points. The system also provides for improved polishing accuracy using linear polishers having pneumatically adjustable belt tensioning and aligning capabilities.

Method of transporting a semiconductor wafer in a wafer polishing system

A wafer cleaner and dryer to be used in wafer manufacturing operations is provided. The wafer cleaner and dryer has a proximity head which moves toward a wafer surface to complete either a cleaning or a drying operation. The proximity head includes a plurality of source inlets where the plurality of source inlets generates a first pressure on a fluid film present on the wafer surface when the proximity head is in a first position that is close to the wafer surface. The proximity head also contains a plurality of source outlets which introduces a second pressure on the fluid film present on the wafer surface when the proximity head is in the first position. The first pressure generated by the plurality of source inlets is greater than the second pressure created by the plurality of source outlets so as to create a pressure difference where the pressure difference causes removal of the fluid film from the wafer surface.

Capillary proximity heads for single wafer cleaning and drying

A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid, an amount of ammonium fluoride, and an amount of hydrogen fluoride in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.09% by weight to about 0.11% by weight, the amount of ammonium fluoride is in a range from about 0.4% by weight to about 0.6% by weight, the amount of hydrogen fluoride is in a range from about 0.09% by weight to about 0.11% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.

Cleaning solution and method for cleaning semiconductor substrates after polishing of copper film

A method and apparatus are disclosed for chemically-mechanically polishing and planarizing semiconductors. An apparatus includes first and second rollers connected by a tension belt. A polishing member is releasably attached to the first and second rollers. A method includes clamping a first portion of a continuous strip of polishing member to a first roller, clamping a second portion of the continuous strip to a second roller, applying a tension to the continuous strip and rotationally reciprocating the rollers while pressing a semiconductor wafer against the continuous strip.

Method and apparatus for chemical mechanical planarization and polishing of semiconductor wafers using a continuous polishing member feed

Method and apparatus for polishing semiconductor wafers

An apparatus for cleaning edges of substrates is described. The present invention provides a cleaning mechanism that cleans particles off the edge of the wafer based on friction and/or a difference in tangential velocity at a point of contact between the wafer and the cleaning mechanism.

Apparatus for cleaning edges of contaminated substrates

A technique for utilizing a sensor to monitor fluid pressure from a fluid bearing located under a polishing pad to detect a polishing end point. A sensor is located at the leading edge of a fluid bearing of a linear polisher, which is utilized to perform chemical-mechanical polishing on a semiconductor wafer. The sensor monitors the fluid pressure to detect a change in the fluid pressure during polishing, which change corresponds to a change in the shear force when the polishing transitions from one material layer to the next. In order to ensure that there is a noticeable difference in the shear force variation at the polishing end point, a slurry having a particular pH level is selected. The pH level ensures that the zeta potential changes noticeably from one material to the next, so as to induce a change in the shear force, which is detected by a change in the fluid pressure.

Use of zeta potential during chemical mechanical polishing for end point detection

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Palo Alto, CA, United States of America

Wilbur C Krusell