Asm IP Holding B.v.

Wentao Wang

Xing Lin

Junwei Su

Alexandros Demos

Peipei Gao

Rutvij Naik

Shujin Huang

Mingyang Ma

Chuang Wei

Chuqin Zhou

Ion Hong Chao

Prajwal Nagaraj

Paul F Ma

Matthew G Goodman

Robert Michael Vyne

Caleb Miskin

Amir Kajbafvala

Fei Wang

Stephen Dale Coomer

Siyao Luan

Robinson James

Bubesh Babu Jotheeswaran

Youness Alvandi-Tabrizi

Fan Gao

Timo Bergman

Hichem M'Saad

Lee Bode

Han Ye

Robin Scott

A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.

Susceptors with film deposition control features

A coating and a method to form the coating is proposed for a semiconductor film pre-clean and etch apparatus. The coating may be employed in environments where it is difficult to use a traditional coating or coating method. The coatings provide advantages including: an ability to effectively deliver hydrogen radicals and fluorine radicals to a wafer surface in one apparatus or individually in two apparatuses; a coverage of high aspect ratio features on critical components; an operability in high temperatures exceeding 150° C.; and a protection of a part with high aspect ratio features underneath the coating, thereby preventing metal and particles on a processed wafer.

High temperature coatings for a preclean and etch apparatus and related methods

A system and method suitable for removing both carbon-based contaminants and oxygen-based contaminants from a substrate within a single process chamber are disclosed.

Apparatus for use with hydrogen radicals and method of using same

Susceptor

Systems of reducing devitrification within a chemical vapor deposition system can include a susceptor support ring that is configured to be positioned between a gas inlet and a gas outlet of a chamber passage. An example system can also include a getter support comprising a support base and one or more recesses therein. Each of the one or more recesses can be arranged to receive corresponding one or more support elements that are configured to support the getter plate. At least a portion of the getter support may include a coating comprising silicon carbide (SiC) having a thickness of at least about 50 microns. The getter support may be arranged to be disposed a maximum distance of between about 1 mm and about 10 mm from the susceptor support ring.

Semiconductor deposition reactor and components for reduced quartz devitrification

Combined susceptor, support, and lift system

A reactor system including a gas distribution assembly and method of using the reactor system are disclosed. The gas distribution assembly includes a gas distribution device, a gas expansion area, and a showerhead plate downstream of the gas distribution device and the expansion area.

Reactor system including a gas distribution assembly for use with activated species and method of using same

Semiconductor deposition reactor ring

A gas distribution system is disclosed in order to obtain better film uniformity on a wafer. The better film uniformity may be achieved by utilizing an expansion plenum and a plurality of, for example, proportioning valves to ensure an equalized pressure or flow along each gas line disposed above the wafer.

Gas distribution apparatus for improved film uniformity in an epitaxial system

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Phoenix, AZ, United States of America

Wentao Wang