Tokyo Electron Limited

Tokyo Electron Limi Ted

Tokyo Electron Limitetd

Wenling Wang

Tatsuya Yamaguchi

Fujio Suzuki

Koichi Sakamoto

Takanori Saito

Koji Yoshii

Moyuru Yasuhara

Yuichi Takenaga

Goro Takahashi

Keisuke Suzuki

Sunil C Shah

Pradeep Pandey

Takashi Yokota

Noriaki Koyama

Kenichi Yamaga

Mark Alan Erickson

Toshiyuki Ikeuchi

Hisashi Inoue

Masato Yonezawa

Masahiko Kaminishi

Takahito Kasai

Yuki Kataoka

Minoru Obata

Tsukasa Yonekawa

Toshihiko Takahashi

Toru Sato

Youngchul Park

Shoichi Kanda

The heat treatment apparatus includes: a processing chamber which accommodates a processing object; a heating unit which heats the processing object accommodated in the processing chamber; a temperature detecting unit which detects an internal temperature of the processing chamber; and a controller which sets a second setting temperature identical to as a temperature detected by the temperature detecting unit when the temperature detected by the temperature detecting unit falls below a predetermined first setting temperature due to an external disturbance; controls the heating unit so that a third setting temperature between the second setting temperature and the first setting temperature becomes identical to the temperature detected by the temperature detecting unit; and controls the heating unit so that the first setting temperature becomes identical to the temperature detected by the temperature detecting unit after the third setting temperature becomes identical to the temperature detected by the temperature detecting unit.

Heat treatment apparatus and method of controlling the same

A control unit can select a large-number control zone model in which the number of control zones, which are independently controlled, is large, and a small-number control zone model in which the number of control zones, which are independently controlled, is small. When a temperature is increased or decreased, the control unit can select the small-number control zone model so as to control, based on signals from temperature sensors of the respective control zones C1 . . . C5 whose number is small, heaters located on the respective control zones C1 . . . C5. When a temperature is stabilized, the control unit can select the large-number control zone model so as to control, based on signals signals from the temperature sensors of the respective control zones C1 . . . C10 whose number is large, the heaters located on the respective control zones C1 . . . C10.

Thermal processing apparatus and method of controlling the same

A heat treatment apparatus including: a processing container for processing wafers held in a boat; heaters for heating the processing container; and a control section for controlling the heaters. Heater temperature sensors are provided between the heaters and the processing container, in-container temperature sensors are provided in the processing container, and movable temperature sensors are provided in the boat. The temperature sensors are connected to a temperature estimation section. The temperature estimation section selects two of the three types of temperature sensors, e.g. the movable temperature sensors and the in-container temperature sensors, and determines the temperature of a wafer according to the following formula: T=T&#xd7;(1&#x2212;&#x3b1;)+T&#xd7;&#x3b1;, &#x3b1;&#x3e;1, where Tand Trepresent detection temperatures of the selected temperature sensors, and &#x3b1; represents a mixing ratio.

Heat treatment apparatus and heat treatment method

According to an embodiment of the present invention, a heat treatment system is provided. The heat treatment system includes a heating unit, a heat treatment condition memory unit, a power change model memory unit, a heat treatment change model memory unit, a heat treatment result reception unit, and an optimal temperature calculation unit. In the heat treatment system, the optimal temperature calculation unit calculates the power of the heating unit at a corresponding temperature based on the model stored in the power change model memory unit and the calculated temperature, and an optimal temperature is a temperature at which a heat treatment result is closest to the targeted heat treatment result within a range in which the calculated power of the heating unit is not saturated.

Heat treatment system, heat treatment method, and non-transitory computer-readable recording medium

A heat treatment apparatus and control method enabling the apparatus to settle down an internal temperature of a treating vessel to a target temperature accurately and quickly. The heat treatment apparatus includes a furnace body with a heater on an inner circumferential surface thereof, the treating vessel disposed inside the furnace body, a cooling medium supply blower and cooling medium release blower each connected to the furnace body, and a temperature sensor provided inside the treating vessel. A signal from the temperature sensor is sent to a heater output computing unit and blower output computing unit included in a controller. The heater output computing unit determines a heater output level based on a heater output numerical model and the signal from the temperature sensor. The blower output computing unit determines a blower output level based on a blower output numerical model and the signal from the temperature sensor.

Vertical-type heat treatment apparatus

The heat treatment apparatus that increases a temperature of a processing object and performs a heat treatment in a constant temperature, the heat treatment apparatus includes: a processing chamber which accommodates the processing object; a heating unit which heats the processing object accommodated in the processing chamber; a memory unit which stores two or more temperature control models that are previously created, a temperature controller which controls a temperature of the heating unit; and an apparatus controller which controls the temperature controller and the memory unit, wherein the apparatus controller selects a temperature control model among the two or more temperature control models according to desired heat treatment conditions, and wherein the temperature controller reads out the selected temperature control model from the memory unit to control the heating unit.

Provided is a method of controlling temperatures of objects to be heated in a heating unit by adjusting a heating rate of each of a plurality of heating elements, based on temperature detection values detected at a plurality of temperature detection elements, wherein the plurality of temperature detection elements are positioned at different positions and the plurality of heating elements are positioned at different positions. The method includes estimating a temperature of each of the plurality of temperature detection elements by using a first estimation algorithm when one of the plurality of temperature detection elements is broken, based on the temperature detection values of the temperature detection elements excluding the broken temperature detection element, and controlling the temperatures of the objects to be heated based on the estimated temperatures.

Temperature control method, storage medium storing a program therefor, temperature control apparatus, and heat treatment apparatus

A control unit can select a large-number control zone model in which the number of control zones, which are independently controlled, is large, and a small-number control zone model in which the number of control zones, which are independently controlled, is small. When a temperature is increased or decreased, the control unit can select the small-number control zone model so as to control, based on signals from temperature sensors of the respective control zones C. . . Cwhose number is small, heaters located on the respective control zones C. . . C. When a temperature is stabilized, the control unit can select the large-number control zone model so as to control, based on signals from the temperature sensors of the respective control zones C. . . Cwhose number is large, the heaters located on the respective control zones C. . . C.

There are provided a thermal processing apparatus, a method for regulating a temperature of a thermal processing apparatus, and a program, by which a temperature can be easily regulated. A control partof a thermal processing apparatuscontrols the apparatus so as to deposit SiOfilms on semiconductor wafers W, and judges whether the SiOfilms satisfy an in-plane uniformity. When the in-plane uniformity is not judged to be satisfied, the control partcalculates a temperature of a preheating partby which temperature the in-plane uniformity can be satisfied. The control partcontrols the apparatus so as to deposit SiOfilms on semiconductor wafers W under process conditions in which the temperature of the preheating parthas been varied into the calculated temperature, and the temperature of the preheating partsis regulated. When the in-plane uniformity is judged to be satisfied, the control partregulates temperatures of heaterstoby the same procedure so as to satisfy an inter-plane uniformity.

Thermal processing apparatus, method for regulating temperature of thermal processing apparatus, and program

A thermal processing apparatus comprising a processing vessel containing, in addition to a plurality of objects subject to heat treatment, an acoustic wave device for temperature measurement. A holding unit holds the plurality of objects to be processed and an object for temperature measurement utilizing an acoustic wave device. A heating unit heats the objects to be processed and the object for temperature measurement. A first conductive member functions as an antenna for transmitting an electromagnetic wave toward the acoustic wave device in the processing vessel; a second conductive member functions as a receiver antenna for receiving an electromagnetic wave dependent on a temperature of the acoustic wave device which is emitted from the acoustic wave device. A temperature analysis part obtains a temperature of the object based on the electromagnetic wave received by the receiver antenna, and a temperature control part controls the heating unit. The first and second conductive members are each part of the thermal processing parts in the processing vessel.

Thermal processing apparatus and thermal processing method for object to be processed

The present invention provides a processing system, a processing method and a program, which can readily control a gas flow rate. A vertical-type heating apparatusincludes a plurality of gas supply pipestoeach adapted for supplying a processing gas into a reaction vesselconfigured to contain therein semiconductor wafers W. For the gas supply pipesto, flow rate control unitstoare provided, respectively, for controlling each flow rate. In a control unit, processing conditions including the flow rate of the processing gas and a film thickness-flow rate-relationship model indicative of a relationship between the flow rate of the processing gas and a film thickness, are stored. The control unitcalculates the flow rate of the processing gas based on a process result obtained by processing the semiconductor wafers W under the processing conditions as well as on the film thickness-flow rate-relationship model, so as to process the semiconductor wafers W, while controlling the respective flow rate control unitsto, such that the flow rate of the processing gas will be changed into the calculated flow rate of the processing gas.

Processing system, processing method, and computer program

The present invention provides a substrate processing system, a control method for a substrate processing apparatus, and a program for the system and/or method, each of which is intended to achieve effective control for a film-forming amount on processed substrates. The substrate processing system includes a substrate processing unit adapted for forming a film on each of the plurality of substrates; a pattern obtaining unit adapted for obtaining information about an arrangement pattern concerning arrangement of unprocessed substrates and processed substrates among the plurality of substrates; and a memory unit adapted for storing therein an arrangement/film-forming-amount model indicative of influence exerted on the film-forming amount on the substrates by the arrangement of the unprocessed substrates and processed substrates among the plurality of substrates. A calculation unit calculates an estimated film-forming amount on the substrates, in the case of the arrangement pattern, based on the arrangement/film-forming-amount model. Then, a determination unit determines whether or not the estimated film-forming amount calculated by the calculation unit is within a predetermined range. If the estimated film-forming amount calculated by the calculation unit is determined to be within the predetermined range, a control unit will control and drive the substrate processing unit to process the substrates.

Substrate processing system, control method for substrate processing apparatus and program stored on medium

The present invention provides a heating system, a heating method and a program, which can readily control processing temperature. A temperature calculating computerof the heating system includes a device DB. The device DBstores therein a temperature correcting table indicative of a relationship between an accumulated film thickness of extraneous matter attached to the interior of each heating apparatus and a temperature correcting amount, with respect to each heating apparatus, for each temperature (processing temperature) in the heating apparatus. Thus, the temperature correcting amount can be specified based on the temperature correcting table, the processing temperature and the accumulated film thickness, so that an optimized value can be calculated from the specified temperature correcting amount.

Heat system, heat method, and program

A information processing apparatusfor processing an acquired value, which is a value acquired in regard to a state during a treatment, performed by a semiconductor manufacturing apparatusfor performing a treatment on a treatment target containing a semiconductor according to a set value, which is a value for setting a condition of a treatment, includes: a set value receiving portionfor receiving the set value; a state value receiving portionfor receiving the acquired value; a correction amount calculating portionfor calculating a correction amount of the acquired value, using a correction function indicating a relationship between the set value and the acquired value; a correcting portionfor correcting the acquired value received by the state value receiving portion, using the correction amount calculated by the correction amount calculating portion; and an output portionfor outputting a result of correction performed by the correcting portion

Information processing apparatus, semiconductor manufacturing system, information processing method, and storage medium

A heat processing apparatus includes a reaction vessel, a heating unit in the reaction vessel to heat the processing region, a temperature detector that detects temperature in the processing region, and a control part to control the heating unit by PID control. The control part has a rule table, and a performance unit that obtains temperature profiles and calculates differences between actually measured temperatures and target values. It refers to the rule table change the PID constants. The control part also updates relationships between PID constants and predicted temperature change amounts.

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Oshu, Japan

Wenling Wang