Applied Materials, Inc.

Wenhui Li

Praket Prakash Jha

Jingmei Liang

Jinrui Guo

Jung Chan Lee

Michael Wenyoung Tsiang

Mandar Balasaheb Pandit

Man-Ping Cai

Jingmin Leng

A method of depositing a silicon-containing material is disclosed. Some embodiments of the disclosure provide films which fill narrow CD features without a seam or void. Some embodiments of the disclosure provide films which form conformally on features with wider CD. Embodiments of the disclosure also provide superior quality films with low roughness, low defects and advantageously low deposition rates.

CD dependent gap fill and conformal films

Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.

Systems and methods for analyzing defects in CVD films

Growing community of inventors

Jilin, China

Wenhui Li