Lam Research Corporation

Wendy Nguyen

Chris Lee

Chris G N Lee

Yousun Kim Taylor

A method for etching a bilayer resist defined over a substrate in a plasma etch chamber is provided. The method initiates with introducing the substrate having a pattern defined on a first layer of the bilayer resist into the etch chamber. Then SiClgas flows into the etch chamber. Next, a plasma is struck in the etch chamber while flowing the SiClgas. Then the bilayer resist is etched.

Method for bilayer resist plasma etch

A method for etching a wafer having a pattern of photoresist material thereon is disclosed. The method includes curing the photoresist material with a bromine containing plasma. Then a main etch of the wafer is carried out. A method for curing a pattern of photoresist material on a wafer is also disclosed. The curing method includes providing a bromine containing plasma and exposing the photoresist material to the plasma, such that a layer of the wafer below the photoresist material is not etched through. A composition of a plasma for curing a photoresist material on a wafer in a high density plasma processing device includes bromine.

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Wendy Nguyen