Asml Holding N.v.

Asml Netherlands B.v.

Wenceslao A Cebuhar

Jason Douglas Hintersteiner

Azat M Latypov

Arno Jan Bleeker

Yuli Vladimirsky

Justin Lloyd Kreuzer

Gerald Theodore Volpe

Patricius Aloysius Jacobus Tinnemans

Scott Douglas Coston

Stan Janik

Kars Zeger Troost

Karel Diederick Van Der Mast

Andrew W McCullough

Sherman K Poultney

Bernardo Kastrup

Ronald Peter Albright

Solomon S Wasserman

An iterative method of producing optimized setpoint data for controlling the actuation of elements of an array of individually controllable elements in a maskless system and systems therefore. The optimization is based on estimation of a device structure that can utilizes one or more of the following factors: the low-pass characteristics of the projection system, the configuration of the illumination system, and the process window properties.

Lithographic system, device manufacturing method, setpoint data optimization method, and apparatus for producing optimized setpoint data

A system and method are used to compensate for distortions or aberrations in an image formed in a projection system. Pattern data is generated corresponding to features to be formed on a substrate. At least one of aberrations and distortions of a projection optical system are measured. The pattern data is altered based on the measuring step. The altered pattern data is transmitted to a patterning device to control individually controllable elements coupled to the patterning device. Non uniformities in one or both of a field and pupil of an illumination system can also be measured and used to alter the pattern data.

Altering pattern data based on measured optical element characteristics

A lithography method is provided. The method includes generating a beam of radiation, patterning portions of the beam of radiation, projecting the patterned beam of radiation towards a substrate, and blocking scattered light from the beam of radiation from the substrate.

Systems and methods for minimizing scattered light in multi-SLM maskless lithography

A method and system are provided of using a patterning device. An exemplary method includes defining a first region on a surface, the first region being associated with a first element of the patterning device, defining a second region on the surface, the second region being associated with a second element of the patterning device, activating the first element to expose the overlapping region, and deactivating the second element when the first element is active. The first region and the second region overlap in an overlapping region.

Methods and systems to compensate for a stitching disturbance of a printed pattern

A method and system are provided for forming a pattern within an area of a photosensitive surface. An exemplary method includes performing a first exposure of the photosensitive surface in accordance with predetermined image data, wherein the first exposure occurs during a first pass and produces a first image within the area. The image data is adjusted to compensate for identified image deficiencies image deficiencies, the image deficiencies being within a region of the first image. A second exposure, of the photosensitive surface, is performed in accordance with the adjusted image data during a second pass.

Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system not utilizing overlap of the exposure zones

A method and system are provided of using a patterning device. An exemplary method includes performing a first exposure of a surface corresponding to image data, determining an image deficiency within a region of the first image, adjusting the image data to compensate for the image deficiency, and performing a second exposure of the surface corresponding to the adjusted image data during a second pass of the patterning device with respect to the surface. The first exposure occurs during a first pass of the patterning device with respect to the surface to produce a first image on the surface.

The present invention is directed to a lithography system in which scattered light from a pattern generator, having one or more pattern generating devices, is blocked from an object, such as a wafer or display. The system includes a pattern generator with multiple pattern generating devices, a projection system for directing light from the pattern generating device, and an aperture located at or near an object window. The aperture has a profile that matches the configuration of the pattern generating devices. A method for blocking scattered light in a lithography system using multiple pattern generating devices is also provided.

A system and method for patterning a beam of radiation based on a pupil field distribution. In an embodiment, the distribution of the field in an area of the pupil plane affecting an image and an illumination mode are selected so as to render an image with desired characteristics. Additionally and/or alternatively, an illumination mode is selected so as to render an image with desired characteristics. The distribution of the field in an area of the pupil plane affecting an image is then realized using the spatial light modulator The system and method include using an illumination system, a pattern generator, and a projector. The illumination system supplies a beam of radiation. The pattern generator patterns the beam of radiation based on a data set corresponding to a field distribution in a pupil plane. The projector projects the patterned beam onto a target portion of an object.

System and method for imaging enhancement via calculation of a customized optimal pupil field and illumination mode

Provided are a method and system for determining states of spatial light modulator (SLM) pixels in a lithography system configured to print a desired pattern. The method includes determining diffraction orders associated with an ideal mask of a pattern to be printed by the lithography system, and then configuring the states of the SLM pixels to match all the diffraction orders that are relevant in the image formation.

Method and system for a maskless lithography rasterization technique based on global optimization

In lithography applications, it is desirable to control, for example, a position or width of a printed line. An effective method of controlling these patterns and their resolution is by having as many grayscale levels as possible. The present invention comprises methods of grayscaling wherein modulation of the exposure time increases the number of grayscale levels on an object. In addition, the present invention comprises methods of grayscaling wherein modulating the power of an exposure beam provides additional grayscale levels.

Using time and/or power modulation to achieve dose gray-scale in optical maskless lithography

A maskless lithography system that writes patterns on an object. The system can include an illumination system, the object, spatial light modulators (SLMs), and a controller. The SLMs can pattern light from the illumination system before the object receives the light. The SLMs can include a leading set and a trailing set of the SLMs. The SLMs in the leading and trailing sets change based on a scanning direction of the object. The controller can transmit control signals to the SLMs based on at least one of light pulse period information, physical layout information about the SLMs, and scanning speed of the object. The system can also correct for dose non-uniformity using various methods.

Maskless lithography systems and methods utilizing spatial light modulator arrays

An illumination method and system use a light source and illumination optics to illuminate a pattern generator. The illumination optics can include at least two devices. For example, if first and second diffractive and/or refractive devices are used, one can be a pupil defining element (PDE) and one can be a field defining element (FDE). In another example, a third diffractive or refractive element can be used to make light entering the illumination system uniform. When only two are used, the PDE forms one or more light beams having a defined profile. The FDE directs the one or more light beams having the defined profile, such that each directed beam substantially corresponds in size and shape to a desired illumination area(s) on the pattern generator. The directed beams are directed to impinge substantially only on the desired illumination area(s). Thus, using the PDE and the FDE increases optical efficiency of light impinging on the pattern generator and substantially reduces or eliminates stray light caused by light impinging on undesired areas of the pattern generator.

Efficiently illuminating a modulating device

A method and system are provided for printing a pattern on a photosensitive surface using a spatial light modulator (SLM). An exemplary method includes defining two or more exposure areas on the photosensitive surface, the exposure areas overlapping along respective edge portions of the exposure areas to form an overlap zone therebetween. Two or more exposure areas are exposed to print an image therein, the exposing extending through the overlap zone. The exposing within the overlap zone is then attenuated.

Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system utilizing overlap of exposure zones with attenuation of the aerial image in the overlap region

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Norwalk, CT, United States of America

Wenceslao A Cebuhar