Applied Materials, Inc.

Wenbo Yan

Ning Li

Li-Qun Xia

Mihaela A Balseanu

Cong Trinh

Victor Nguyen

Mark Joseph Saly

Maribel Maldonado-Garcia

Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.

Methods and apparatus for low temperature silicon nitride films

Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250&#xb0; C. to form a silicon nitride film with a low etch rate without damaging the metal surface.

Processes for depositing SiOfilms on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.

High temperature silicon oxide atomic layer deposition technology

Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for accurate control of film thickness using deposition-etch cycles. Particularly, embodiments of the present disclosure may be used in controlling film thickness during filling high aspect ratio features.

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Sunnyvale, CA, United States of America

Wenbo Yan