Taiwan Semiconductor Manufacturing Comp. Ltd.

Mediatek Corporation

Wen-Yi Lin

Po-Yao Lin

Ming-Chih Yew

Shin-Puu Jeng

Kuang-Chun Lee

Shu-Shen Yeh

Kuo-Chuan Liu

Chien-Chen Li

Chen-Shien Chen

Chin-Hua Wang

Fu-Jen Li

Jiun Yi Wu

Feng-Cheng Hsu

Jing Ruei Lu

Cheng-Lin Huang

Tsung-Shu Lin

Shyue-Ter Leu

Cheng-Yi Hong

Chien-Li Kuo

Mill-Jer Wang

Yu-Sheng Lin

Wei-Ting Lin

Hugh Thomas Mair

Hao Chen

Kuo-Chio Liu

Hsien-Wen Liu

Yu-Chih Liu

Kuo-Chin Chang

Che-Chia Yang

Yu-Huan Chen

Shou-Yi Wang

Girishankar Gurumurthy

Chao-Chi Chen

Bor-Rung Su

Kin-Hooi Dia

Chuan-Hsiang Sun

Shao-Hua Huang

Shyue Ter Leu

Shi-Sheng Hu

In an embodiment, a device includes: an integrated circuit die including a die connector; a first through via adjacent the integrated circuit die; an encapsulant encapsulating the first through via and the integrated circuit die; and a redistribution structure on the encapsulant, the redistribution structure including a redistribution line, the redistribution line physically and electrically coupled to the die connector of the integrated circuit die, the redistribution line electrically isolated from the first through via, the redistribution line crossing over the first through via.

Dummy through vias for integrated circuit packages and methods of forming the same

The present disclosure describes a semiconductor structure having a heterostructure channel layer. The semiconductor structure includes a substrate and a fin structure on the substrate. The fin structure includes a channel layer and a bottom layer between the channel layer and the substrate. The channel layer includes first, second, and third portions on top of the bottom layer. The first and third portions include the same material as the bottom layer. The second portion includes a material different from the bottom layer. The semiconductor structure further includes first and second source/drain structures on the bottom layer and adjacent to the channel layer. The first source/drain structure is in contact with the first portion of the channel layer. The second source/drain structure is in contact with the third portion of the channel layer.

Heterostructure channel layer for semiconductor devices

A substrate for a semiconductor package includes an array of bonding pads on a first surface of the substrate, and a plurality of raised structures adjacent to at least some of the bonding pads on the first surface of the substrate. The raised structures may be configured to control the height of solder balls contacting the array of bonding pads when the package substrate is mounted onto a support substrate. The raised structures may compensate for a deformation of the package substrate so that the co-planarity of the solder balls may be improved, thereby providing an improved solder connection between the package substrate and the support substrate.

Systems for semiconductor package mounting with improved co-planarity

A semiconductor package is provided, which includes a first chip disposed over a first package substrate, a molding compound surrounding the first chip, a first thermal interface material disposed over the first chip and the molding compound, a heat spreader disposed over the thermal interface material, and a second thermal interface material disposed over the heat spreader. The first thermal interface material and the second thermal interface material have an identical width.

Semiconductor package

A package structure is provided. The package structure includes a substrate and a chip-containing structure over the substrate. The package structure also includes a protective lid attached to the substrate through a first adhesive element and a second adhesive element. The first adhesive element has a first electrical resistivity, and the second adhesive element has a second electrical resistivity. The second electrical resistivity is greater than the first electrical resistivity. The second adhesive element is closer to a corner edge of the substrate than the first adhesive element, and a portion of the second adhesive element is between the first adhesive element and the chip-containing structure.

Package structure with protective lid

A probe head structure is provided. The probe head structure includes a flexible substrate having a top surface and a bottom surface. The probe head structure includes a first probe pillar passing through the flexible substrate. The first probe pillar has a first protruding portion protruding from the bottom surface. The probe head structure includes a redistribution structure on the top surface of the flexible substrate and the first probe pillar. The redistribution structure is in direct contact with the flexible substrate and the first probe pillar. The redistribution structure includes a dielectric structure and a wiring structure in the dielectric structure. The wiring structure is electrically connected to the first probe pillar. The probe head structure includes a wiring substrate over the redistribution structure. The probe head structure includes a first conductive bump connected between the wiring substrate and the redistribution structure.

Method for forming probe head structure

A method of forming a semiconductor package is provided. The method includes mounting a chip on a package substrate. The method further includes placing a heat spreader over the chip and applying a thermal interface material to a first surface of the heat spreader facing the chip. The heat spreader is flexible. In addition, the method includes attaching the heat spreader to the chip through the thermal interface material by rolling a rod over a second surface of the heat spreader, and the second surface is opposite to the first surface.

Method for forming semiconductor package

A package structure and a formation method of a package structure are provided. The method includes disposing a chip structure over a substrate, and forming a first adhesive element over the substrate. The first adhesive element has a first electrical resistivity. The method also includes forming a second adhesive element over the substrate. The second adhesive element has a second electrical resistivity, and the second electrical resistivity is greater than the first electrical resistivity. The method further includes attaching a protective lid to the substrate through the first adhesive element and the second adhesive element. The protective lid surrounds the chip structure and covers a top surface of the chip structure.

Structure and formation method of chip package with protective lid

A semiconductor package is provided. The semiconductor package includes a package substrate. The semiconductor package further includes a first chip and a second chip mounted on the package substrate. The thickness of the first chip is different from that of the second chip. In addition, the semiconductor package includes a heat spreader attached on top of the first chip and top of the second chip. A first portion of the heat spreader over the first chip and a second portion of the heat spreader over the second chip have the same thickness.

Semiconductor package and method for forming the same

A method for forming a package structure is provided. The method includes forming a first die over a first substrate, and injecting a molding compound material from a first side of the first die to a second side of the first die. The molding compound material includes a plurality of first fillers, each of the first fillers has a length along a longitudinal axis and a width along a transverse direction, and the length is greater than the width. The method further includes heating the molding compound material to form a package layer over the first die, and the first fillers are substantially parallel to each other.

Method for forming package structure

A standard cell circuit includes a standard cell unit and a first resistive device. The standard cell unit is coupled to at least one resistor. The first resistive device is coupled to the standard cell unit and provides a first current path for a first current to flow through.

Standard cell circuitries

A voltage generating circuit comprising: a first switch circuit, operating in a first power domain; a second switch circuit, operating in a second power domain; a first transistor of first type, comprising a control terminal coupled to the first switch circuit and the second first switch circuit, wherein the control terminal of the first transistor of first type is coupled to a predetermined voltage source via the first switch circuit if the first switch circuit is active, wherein the control terminal of the first transistor of first type is coupled to the predetermined voltage source via the second switch circuit if the second switch circuit is active; and an output circuit, coupled to the first transistor of first type and operating in the second power domain.

Voltage generating circuit and ESD protecting method

The present disclosure provides a system for wafer warpage inspection including a heatable susceptor configured to heat a wafer according to a predetermined temperature profile. The system for wafer warpage inspection further includes a confocal imager array over the heatable susceptor configured to capture one or more warpage parameters of the wafer. Each confocal imager of the confocal imager array covers a predetermined field of view (FOV). The system for wafer warpage inspection further includes a first actuator permitting the confocal imager array to move in a plurality of directions. The system for wafer warpage inspection further includes a processing unit connected to the confocal imager array. The processing unit is configured to dynamically process the one or more warpage parameters captured during the heating of the wafer according to the predetermined temperature profile. Present disclosure also provides a method for wafer warpage inspection described herein.

Wafer warpage inspection system and method using the same

A flip-flop circuit is provided. The flip-flop circuit receives a test signal at a test-in terminal and a data signal at a data-in terminal and generates a scan-out signal. The flip-flop circuit includes a buffer and a scan flip-flop. The buffer has an input terminal coupled to the test-in terminal and an output terminal and further has a first power terminal and a second power terminal. The buffer operates to generate a buffering signal. The scan flip-flop receives the buffering signal and the data signal. The scan flip-flop is controlled by a test-enable signal to generate the scan-out signal according to the buffering signal or the data signal. The scan flip-flop further generates a test-enable reverse signal which is the reverse of the test-enable signal. The first power terminal of the buffer receives the test-enable signal or the test-enable reverse signal.

Flip-flop circuit and scan chain using the same

A ring structure for chip packaging comprises a frame portion adaptable to bond to a substrate and at least one corner portion. The frame portion surrounds a semiconductor chip and defines an inside opening, and the inside opening exposes a portion of a surface of the substrate. The at least one corner portion extends from a corner of the frame portion toward the chip, and the corner portion is free of a sharp corner.

Growing community of inventors

Taipei, Taiwan

Wen-Yi Lin