Other

Taiwan Semiconductor Manufacturing Comp. Ltd.

Wen Yao Chang

Shih-Chang Chen

Chi-Chun Chen

Chih-Cheng Lu

Michael Chang

Syun-Ming Jeng

A circuit board with a substrate made of silicon includes a silicon substrate made of silicon; an adhering layer which is a gluing layer and is adhered on the silicon substrate; and a metal layer formed as a metal plate layer or a metal circuit layer; the metal layer being adhered on the adhering layer. Furthermore, the method for forming the circuit board with silicon substrate is proposed, in that a method for forming a circuit board suitable for etching and a method for forming a circuit board for screen printing are proposed.

Circuit board with a substrate made of silicon and the methods for forming the same

A circuit board with a substrate made of silicon includes a a silicon substrate made of silicon; an adhering layer which is a gluing layer and is adhered on the silicon substrate; a metal layer formed as a metal plate layer or a metal circuit layer; the metal layer being adhered on the adhering layer. Furthermore, the method for forming the circuit board with silicon substrate is proposed, in that a method for forming a circuit board suitable for etching and a method for forming a circuit board for screen printing are proposed.

Method for forming a circuit board with a substrate made of silicon

A method for removing at least one carbon doped oxide layer over a surface to recycle the semiconductor process wafer including providing a semiconductor wafer including a process surface including at least one carbon doped silicon oxide layer; oxidizing the carbon doped oxide layer according to an oxidizing treatment to convert at oxidize at least a portion of the carbon doped oxide layer to produce silicon oxide; and, wet etching the silicon oxide to substantially remove the silicon oxide.

Method for recycling semiconductor wafers having carbon doped low-k dielectric layers

A method of forming a highly uniform ultra-thin insulating gate oxide layer on a silicon wafer is presented where an oxide layer non-uniformity introduced at a processing temperature is compensated during a cooling step during which oxygen is added to give additional oxide layer growth thereby producing a substantially uniform oxide layer.

Growing community of inventors

Taipei, Taiwan

Wen Yao Chang