United Microelectronics Corp.

Wen-Tien Hung

Chin-Lung Lin

Chuen-Huei Yang

Ming-Jui Chen

A phase shift mask includes a transparent substrate, a semi-dense pattern, and a dense pattern. The semi-dense pattern is formed on the transparent substrate including a plurality of phase shift regions and non-phase shift regions arranged successively. The dense pattern is formed on the transparent substrate including a plurality of non-phase shift regions, phase shift regions, and non-transparent regions.

Phase shift mask

A photomask pattern on a substrate is provided. The photomask pattern comprises a main pattern and a sub-resolution assistant feature. The sub-resolution assistant feature is located on the sides of the main pattern. Furthermore, the sub-resolution assistant feature comprises a first assistant feature and a second assistant feature. The first assistant feature is formed close to the main pattern and the second assistant feature is formed further away from the main pattern but adjacent to the first assistant feature. There is a phase difference of 180&#xb0; between the first assistant feature and the main pattern. Similarly, there is a phase difference of 180&#xb0; between the second assistant feature and the first assistant feature. Since the main pattern is bordered by reverse-phase assistant feature, exposure resolution of the photomask is increased.

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Taipei, Taiwan

Wen-Tien Hung