Mediatek Corporation

Wen-Sung Hsu

Ta-Jen Yu

Tzu-Hung Lin

Shih-Chin Lin

Tao Cheng

Nai-Wei Liu

Yen-Yao Chi

Tai-Yu Chen

Andrew C Chang

Yi-Lin Tsai

I-Hsuan Peng

Yi-Jou Lin

Nan-Cheng Chen

Che-Ya Chou

Chih-Ming Hung

Yen-Ju Lu

Shih-Huang Yeh

Wen-Chou Wu

Yeh-Chun Kao

Chung-Fa Lee

Wei-Hsiu Hsu

Ming-Chieh Lin

Chi-Yuan Chen

Sheng-Liang Kuo

Bo-Jiun Yang

Jen-Chuan Chen

Wen-Chun Huang

Chia-Hao Hsu

Yao-Pang Hsu

Chi-Wen Pan

Ming-Jen Hsiung

Ya-Jui Hsieh

Hsueh-Te Wang

Chia-Yu Jin

Shih-Yi Syu

Kun-Ting Hung

Shih-Chao Chiu

Yu-Sheng Hung

Hung-Jen Chang

Tzu Hung Lin

Sang-Mao Chiu

A semiconductor package structure includes a substrate, a redistribution layer, a first semiconductor component, a conductive pillar, and a second semiconductor component. The redistribution layer is over the substrate. The first semiconductor component is over the redistribution layer. The conductive pillar is adjacent to the first semiconductor component, wherein the first semiconductor component and the conductive pillar are surrounded by a molding material. The second semiconductor component is over the molding material, wherein the second semiconductor component is electrically coupled to the redistribution layer through the conductive pillar.

Semiconductor package structure

A semiconductor device includes a substrate, an electronic component, a cover and a liquid metal. The electronic component is disposed on the substrate. The cover is disposed on the substrate and covers the electronic component. The liquid metal is formed between the cover and the electronic component.

Semiconductor device and manufacturing method thereof

A semiconductor package includes a first die structure, a first redistribution structure that is disposed on the first die structure, a second die structure that is disposed on the first redistribution structure, and a second redistribution structure that is disposed on the second die structure. The first die structure includes an interposer, and the interposer includes a semiconductor substrate and through-vias that penetrate through the semiconductor substrate. A first integrated circuit die is disposed in the semiconductor substrate of the interposer. The second die structure includes a second integrated circuit die that is encapsulated in an encapsulant and several conductive pillars that penetrate through the encapsulant. The first integrated circuit die is electrically connected to the second integrated circuit die through the first redistribution structure, the conductive pillars, and the second redistribution structure.

Semiconductor package having an interposer in which one or more dies are formed and method of forming the same

A semiconductor package includes a substrate having a top surface and a bottom surface; a semiconductor die mounted on the top surface of the substrate; and a two-part lid mounted on a perimeter of the top surface of the substrate and housing the semiconductor die. The lid comprises an annular lid base and a cover plate removably installed on the annular lid base. The semiconductor package can be uncovered by removing the cover plate and a forced cooling module can be installed in place of the cover plate.

Lidded semiconductor package

A semiconductor device includes a bottom package, a top package stacked on the bottom package, and an interposer disposed between the bottom package and the top package. The top package is electrically connected to the interposer through a plurality of peripheral solder balls. At least a dummy thermal feature is disposed on the interposer and surrounded by the plurality of peripheral solder balls.

Semiconductor device with dummy thermal features on interposer

A semiconductor package structure includes a substrate, a bridge structure, a redistribution layer, a first semiconductor component, and a second semiconductor component. The substrate has a wiring structure. The bridge structure is over the substrate. The redistribution layer is over the bridge structure. The first semiconductor component and the second semiconductor component are over the redistribution layer, wherein the first semiconductor component is electrically coupled to the second semiconductor component through the redistribution layer and the bridge structure.

A semiconductor package structure includes a semiconductor die, a redistribution layer (RDL) structure, a protective insulating layer, and a conductive structure. The semiconductor die has a first surface, a second surface opposite the first surface, and a third surface adjoined between the first surface and the second surface. The RDL structure is on the first surface of the semiconductor die and is electrically coupled to the semiconductor die. The protective insulating layer covers the RDL structure, the second surface and the third surface of the semiconductor die. The conductive structure passes through the protective insulating layer and is electrically coupled to the RDL structure.

Chip scale package structure and method of forming the same

A semiconductor chip package includes a substrate having a top surface and a bottom surface, and a semiconductor device mounted on the top surface of the substrate. A gap is provided between the semiconductor device and the top surface of the substrate. A multi-layer laminate epoxy sheet is disposed on the top surface of the substrate and around a perimeter of the semiconductor device.

Semiconductor chip package and fabrication method thereof

A semiconductor package includes a first substrate, a first layer structure, a second layer structure, a first antenna layer and an electronic component. The first antenna layer is formed on at least one of the first layer structure and the second layer structure, wherein the first antenna layer has an upper surface flush with a layer upper surface of the first layer structure or the second layer structure. The electronic component is disposed on a substrate lower surface of the first substrate and exposed from the first substrate. The first layer structure is formed between the first substrate and the second layer structure.

Semiconductor package with layer structures, antenna layer and electronic component

A semiconductor package structure including a semiconductor die having a first surface, a second surface opposite the first surface, and a third surface adjoined between the first surface and the second surface. A first protective insulating layer covers the first and third surfaces of the semiconductor die. A redistribution layer (RDL) structure is electrically coupled to the semiconductor die and surrounded by the first protective insulating layer on the first surface of the semiconductor die. A first passivation layer covers the first protective insulating layer and the RDL structure. At least one conductive structure passes through the first passivation layer and is electrically coupled to the RDL structure. A method of forming the semiconductor package is also provided.

A semiconductor package structure is provided. The semiconductor package structure includes a semiconductor die surrounded by a first molding compound layer. A redistribution layer (RDL) structure is formed on a non-active surface of the semiconductor die and the first molding compound layer. A second molding compound layer is formed on the RDL structure. An insulating capping layer covers the second molding compound layer. An antenna is electrically coupled to the semiconductor die and includes a first antenna element formed in the RDL structure and a second antenna element formed between the second molding compound layer and the insulating capping layer.

Fan-out package structure with integrated antenna

A semiconductor package structure includes a substrate, a first redistribution layer, a second redistribution layer, a bridge structure, a first semiconductor component, and a second semiconductor component. The first redistribution layer is over the substrate. The second redistribution layer is over the first redistribution layer. The bridge structure is between the first redistribution layer and the second redistribution layer, wherein the bridge structure includes an active device. The first semiconductor component and the second semiconductor component are located over the second redistribution layer, wherein the first semiconductor component is electrically coupled to the second semiconductor component through the second redistribution layer and the bridge structure.

A semiconductor package structure is provided. The semiconductor package structure includes a redistribution layer (RDL) structure formed on a non-active surface of a semiconductor die. An antenna structure includes a first antenna element formed in the RDL structure, a first insulating layer covering the RDL structure, a second insulating layer formed on the first insulating layer, and a second antenna element formed on and in direct contact with the second insulating layer.

Innovative air gap for antenna fan out package

A semiconductor package structure is provided. The semiconductor package structure includes a first redistribution layer (RDL) structure formed on a non-active surface of a semiconductor die. A second RDL structure is formed on and electrically coupled to an active surface of the semiconductor die. A ground layer is formed in the first RDL structure. A first molding compound layer is formed on the first RDL structure. A first antenna includes a first antenna element formed in the second RDL structure and a second antenna element formed on the first molding compound layer. Each of the first antenna element and the second antenna element has a first portion overlapping the semiconductor die as viewed from a top-view perspective.

Growing community of inventors

Zhubei, Taiwan

Wen-Sung Hsu