Taiwan Semiconductor Manufacturing Comp. Ltd.

Wen-Hung Tseng

Ming-Feng Shieh

Hung-Chang Hsieh

Ching-Yu Chang

Ru-Gun Liu

Chih-Ming Lai

Tsai-Sheng Gau

Ken-Hsien Hsieh

Tzung-Hua Lin

Shih-Shiung Chen

Ruei-Hung Jang

Tsung-Chi Hsieh

Chun-Li Fang

A method of fabricating a semiconductor integrated circuit (IC) is disclosed. A first conductive feature and a second conductive feature are provided. A first hard mask (HM) is formed on the first conductive feature. A patterned dielectric layer is formed over the first and the second conductive features, with first openings to expose the second conductive features. A first metal plug is formed in the first opening to contact the second conductive features. A second HM is formed on the first metal plugs and another patterned dielectric layer is formed over the substrate, with second openings to expose a subset of the first metal plugs and the first conductive features. A second metal plug is formed in the second openings.

Method of semiconductor integrated circuit fabrication

A method of fabricating a fin-like field-effect transistor device is disclosed. The method includes forming mandrel features over a substrate and performing a first cut to remove mandrel features to form a first space. The method also includes performing a second cut to remove a portion of mandrel features to form a line-end and an end-to-end space. After the first and the second cuts, the substrate is etched using the mandrel features, with the first space and the end-to-end space as an etch mask, to form fins. Depositing a space layer to fully fill in a space between adjacent fins and cover sidewalls of the fins adjacent to the first space and the end-to-end space. The spacer layer is etched to form sidewall spacers on the fins adjacent to the first space and the end-to-end space and an isolation trench is formed in the first space and the end-to-end space.

Method of making a FinFET device

A method for forming metal contacts within a semiconductor device includes forming a first-layer contact into a first dielectric layer that surrounds at least one gate electrode, the first-layer contact extending to a doped region of an underlying substrate. The method further includes forming a second dielectric layer over the first dielectric layer and forming a second-layer contact extending through the second dielectric layer to the first-layer contact.

Multi-layer metal contacts

A method for fabricating a semiconductor product includes applying a photo-resist layer to a substrate, the photo-resist layer including a higher acid concentration at an upper portion of the photo-resist layer than at a lower portion of the photo-resist layer. The method also includes exposing the photo-resist layer to a light source through a mask including a feature, the photo-resist layer including a floating, diffusing acid that will diffuse into a region of the photo-resist layer affected by the feature while not diffusing into a feature formed by the mask.

Photo-resist with floating acid

A self-contained ventilator includes a housing having a support member for supporting a pollution source. A filter is further disposed in the housing for filtering contaminants emitted from the pollution source. A conduit is adapted to connect to the housing to provide non-housing communication between portions of the housing. A fan is situated in the conduit to generate an airflow that follows a path through the housing, through the conduit, and back to the housing. The airflow entrains the contaminants such that the contaminants are captured by the filter upon passage of the airflow through the filter.

Growing community of inventors

Luodong, Taiwan

Wen-Hung Tseng