Taiwan Semiconductor Manufacturing Comp. Ltd.

Wen-Hsuan Chen

Cheng-Hui Weng

Kai-Shiang Kuo

Chun-Sheng Chen

Huei-Wen Hsieh

Hung-Wen Su

Chun-Chieh Lin

Ya-Lien Lee

Chia-Pang Kuo

Yao-Min Liu

Cheng-Lun Tsai

Huan-yu Shih

A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

Bi-layer alloy liner for interconnect metallization and methods of forming the same

A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.

Diffusion barrier for semiconductor device and method

Growing community of inventors

Hsinchu, Taiwan

Wen-Hsuan Chen