Taiwan Semiconductor Manufacturing Comp. Ltd.

Wen Hao Liu

Wen-Chun Huang

Hung-Chun Wang

Ming-Hui Chih

Yu-Po Tang

Cheng Kun Tsai

Ching-Hsu Chang

Feng-Ju Chang

Wei-Chen Chien

Chi-Ping Liu

Chia-Feng Yeh

Ru-Gun Liu

Chi-Cheng Hung

Hsien-Huang Liao

Optical proximity correction (OPC) based computational lithography techniques are disclosed herein for enhancing lithography printability. An exemplary mask optimization method includes receiving an integrated circuit (IC) design layout having an IC pattern; generating target points for a contour corresponding with the IC pattern based on a target placement model, wherein the target placement model is selected based on a classification of the IC pattern; and performing an OPC on the IC pattern using the target points, thereby generating a modified IC design layout. The method can further include fabricating a mask based on the modified IC design layout. The OPC can select an OPC model based on the classification of the IC pattern. The OPC model can weight the target placement model.

Optical proximity correction methodology using pattern classification for target placement

Embodiments of the present disclosure provide methods and apparatuses for integrated circuits. An exemplary integrated circuit (IC) method includes providing an IC design layout that includes a design feature; determining a dimensional difference between the design feature and a corresponding developed photoresist feature of a photoresist layer; modifying the CD of the design feature to compensate for the difference, thereby generating a modified IC design layout; and making a mask using the modified IC design layout.

Method and apparatus for reducing implant topography reflection effect

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Hsinchu County, Taiwan

Wen Hao Liu