Taiwan Semiconductor Manufacturing Comp. Ltd.

Wen-Hao Liu

Ru-Gun Liu

Wen-Chun Huang

Chun-Hung Wu

Hung-Chun Wang

Ping-Chieh Wu

Tsong-Hua Ou

Ying-Chou Cheng

Boren Luo

Tsai-Sheng Gau

Kuei Shun Chen

Ming-Hui Chih

Yao-Ching Ku

Chih-Yang Yeh

Te-Chih Huang

Yu-Po Tang

Cheng Kun Tsai

Ching-Hsu Chang

Feng-Ju Chang

Cheng-Kun Tsai

Yu Lun Liu

Feng-Lung Lin

Cheng-Hsuan Huang

Ming-Hsuan Wu

Shu-Chen Lu

George Liu

Chih-Wei Hsu

Chia-Chu Liu

The present disclosure relates to a method of data preparation. The method, in some embodiments, performs a first data preparation process using a data preparation element. The first data preparation process modifies a plurality of shapes of an integrated chip (IC) design that comprises a graphical representation of a layout used to fabricate an integrated chip. A plurality of additional shapes are added to the IC design using an additional shape insertion element. The plurality of additional shapes are separated from the plurality of shapes by one or more non-zero distances. A second data preparation process is performed using the data preparation element, after performing the first data preparation process. The second data preparation process modifies the plurality of additional shapes.

Methodology for pattern density optimization

An integrated circuit (IC) manufacturing method includes receiving an IC design layout having IC regions separate from each other. Each of the IC regions includes an initial IC pattern that is substantially identical among the IC regions. The method further includes identifying a group of IC regions from the IC regions. All IC regions in the group have a substantially same location effect, which is introduced by global locations of the IC regions on the IC design layout. The method further includes performing a correction process to a first IC region in the group, modifying the initial IC pattern in the first IC region into a first corrected IC pattern. The correction process includes using a computer program to correct location effect. The method further includes replacing the initial IC pattern in a second IC region in the group with the first corrected IC pattern.

Method for integrated circuit manufacturing

Provided is an integrated circuit (IC) manufacturing method. The method includes receiving an IC design layout, wherein the IC design layout includes multiple IC regions and each of the IC regions includes an initial IC pattern. The method further includes performing a correction process to a first IC region, thereby modifying the initial IC pattern in the first IC region to result in a first corrected IC pattern in the first IC region, wherein the correction process includes location effect correction. The method further includes replacing the initial IC pattern in a second IC region with the first corrected IC pattern.

The present disclosure relates to a method of improving pattern density with a low OPC (optical proximity correction) cycle time, and an associated apparatus. In some embodiments, the method is performed by performing an initial data preparation process on an IC design including a graphical representation of a layout used to fabricate an integrated chip. The initial data preparation process is performed by using a data preparation element to generate a modified IC design having modified shapes that are modified forms of shapes within the IC design. One or more low-pattern-density areas of the modified IC design are identified using a local density checking element. One or more dummy shapes are added within the one or more low-pattern-density areas using a dummy shape insertion element. The one or more dummy shapes are separated from the modified shapes by a non-zero space.

The present disclosure relates to a method of improving pattern density with a low OPC (optical proximity correction) cycle time, and an associated apparatus. In some embodiments, the method is performed by forming an integrated chip (IC) design that is a graphical representation of an integrated chip. One or more low-pattern-density areas of the IC design are identified having a pattern density that results in a processing failure. The low-pattern-density areas are a subset of the IC design. The pattern density is adjusted within the low-pattern-density area by adding one or more dummy shapes within the low-pattern-density areas. A data preparation process is then performed on the IC design to modify shapes of the one or more dummy shapes within the low-pattern-density areas. By introducing dummy shapes into a local area, rather than into an entire integrated chip design, the demands of the subsequent data preparation process are reduced.

Provided is an integrated circuit (IC) manufacturing method. The method includes receiving a design layout of an IC, wherein the design layout includes a plurality of non-overlapping IC regions and each of the IC regions includes a same initial IC pattern. The method further includes dividing the IC regions into a plurality of groups based on a location effect analysis such that all IC regions in a respective one of the groups are to have substantially same location effect. The method further includes performing a correction to one IC region in each of the groups using a correction model that includes location effect; and copying the corrected IC region to other IC regions in the respective group. The method further includes storing the corrected IC design layout in a tangible computer-readable medium for use by a further IC process stage.

An embodiment of a feed-forward method of determining a photomask pattern is provided. The method includes providing design data associated with an integrated circuit device. A thickness of a coating layer to be used in fabricating the integrated circuit device is predicted based on the design data. This prediction is used to generate a gradating pattern. A photomask is formed having the gradating pattern.

Method of defining an intensity selective exposure photomask

An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage. Each of the features of the first and second array includes an opening disposed in an area of attenuating material.

Intensity selective exposure photomask

The present disclosure provides integrated circuit methods for target-based dummy insertion. A method includes providing an integrated circuit (IC) design layout, and providing a thermal model for simulating thermal effect on the IC design layout, the thermal model including optical simulation and silicon calibration. The method further includes providing a convolution of the thermal model and the IC design layout to generate a thermal image profile of the IC design layout, defining a thermal target for optimizing thermal uniformity across the thermal image profile, comparing the thermal target and the thermal image profile to determine a difference data, and performing thermal dummy insertion to the IC design layout based on the difference data to provide a target-based IC design layout.

Target-based thermal design using dummy insertion for semiconductor devices

An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage.

The present disclosure relates to parameterized dummy cell insertion for process enhancement and methods for fabricating the same. In accordance with one or more embodiments, methods include providing an integrated circuit (IC) design layout with defined pixel-units, simulating thermal effect to the IC design layout including each pixel-unit, generating a thermal effect map of the IC design layout including each pixel-unit, determining a target absorption value for the IC design layout, and performing thermal dummy cell insertion to each pixel-unit of the IC design layout based on the determined target absorption value.

Growing community of inventors

Zhubei, Taiwan

Wen-Hao Liu