Versum Materials Us, LLC

Air Products and Chemicals, Inc.

Wen Dar Liu

Yi-Chia Lee

Tianniu Chen

Madhukar Bhaskara Rao

William Jack Casteel, Jr

Aiping Wu

Seiji Inaoka

Jhih Kuei Ge

Gautam Banerjee

Gene Everad Parris

Laisheng Sun

Chung-Yi Chang

Rajiv Krishan Agarwal

Thomas Michael Wieder

Andrew J Adamczyk

Yi Chia Lee

Matthew I Egbe

Laura M Matz

Michael Walter Legenza

Brenda Faye Ross

Agnes Derecskei-Kovacs

Gang Chris Han-Adebekun

Thomas Mebrahtu

Chimin Sheu

Chao-Hsiang Chen

Yi-chia Lee

Chung Yi Chang

Hsiu Mei Chen

Tianniu Rick Chen

Archie Liao

Randy Li-Kai Chang

Chi-Hsien Kuo

Ryback Li Chang Lo

Ling-Jen Meng

Edward Chia Kai Tseng

Machukar Bhaskara Rao

William Jack Casteel Jr

The disclosed and claimed subject matter is directed to an etching composition that includes (A) phosphoric acid and (B) a mixture that includes (i) a silicon-containing compound and (ii) an aqueous solvent. In some embodiments, the etching compositions include additional ingredients. The etching compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.

Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device

The disclosed and claimed subject matter relates to wet etchants exhibiting high copper and cobalt etching rates where the etching rate ratio between the two metals can be varied. The wet etchants have a composition comprising a formulation consisting of: at least one alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent with the amino and hydroxyl substituents attached to two different carbon atoms; at least one pH adjuster for adjusting the pH of the formulation to between approximately 9 and approximately 12; at least one chelating agent; and water.

Co/Cu selective wet etchant

Described herein is an etching solution and the method of using the etching solution comprising water, phosphoric acid solution (aqueous), an organosilicon compound as disclosed herein, and a hydroxyl group-containing water-miscible solvent. Such compositions are useful for the selective removal of silicon nitride over silicon oxide.

Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device

Described herein is an etching solution suitable for the selective removal of TiSiN over hafnium oxide from a microelectronic device, which consists essentially of: water; at least one alkaline ammonium compound selected from the group consisting of ammonium hydroxide, a quaternary ammonium hydroxide, ammonium fluoride, and a quaternary ammonium fluoride; at least one peroxide compound; a water-miscible organic solvent; at least one nitrogen containing compound selected from the group consisting of a Calkylamine, a polyalkylenimine, and a polyamine; and optionally at least one chelating agent.

Hafnium oxide corrosion inhibitor

Described herein are etching solutions and method of using the etching solutions suitable for etching aluminum nitride (AlN) from a semiconductor substrate during the manufacture of a semiconductor device comprising AlN and silicon material without harming the silicon material. The etching solution comprises a cationic surfactant, water, a base, and a water-miscible organic solvent.

Etching solution and method for aluminum nitride

Described herein is an etching solution suitable for both tungsten-containing metals and TiN-containing materials, which comprises: water; and one or more than one oxidizers; and one or more than one of the components selected from the group consisting of: one or more fluorine-containing-etching compounds, one or more organic solvents, one or more chelating agents, one or more corrosion inhibitors and one or more surfactants.

Etching solution for tungsten word line recess

Described herein is an etching solution comprising water, phosphoric acid solution (aqueous), and a hydroxyl group-containing solvent. Such compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.

Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device

Described herein is an etching solution suitable for the selective removal of polysilicon over silicon oxide from a microelectronic device, which comprises: water; at least one of a quaternary ammonium hydroxide compound; optionally at least one alkanolamine compound; a water-miscible solvent; at least one nitrogen containing compound selected from the group consisting of a Calkylamine, a polyalkylenimine, a polyamine, a nitrogen-containing heterocyclic compound, a nitrogen-containing aromatic compound, or a nitrogen-containing heterocyclic and aromatic compound; and optionally, a surfactant.

Etching solution having silicon oxide corrosion inhibitor and method of using the same

Stripping solutions that may replace an etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes and/or packaging/bumping applications on semiconductor devices for semiconductor integrated circuits with good photoresist removal efficiency and with low silicon oxide etch rate and low metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain polar aprotic solvent, water, hydroxylamine, corrosion inhibitor, quaternary ammonium hydroxide and optional surfactant. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

Stripper solutions and methods of using stripper solutions

Described herein is an etching solution suitable for both tungsten-containing metals and GST metals, which comprises: water; at least one phenolic derivative compound having at least two hydroxyl groups; at least one strong base selected from the group consisting of (i) a quaternary base; (ii) an organic amine; and (iii) a metal hydroxide; optionally an ammonium salt of an organic acid; and optionally a water-miscible solvent, wherein the pH of the etching solution is 10 or greater, and wherein the etching solution is substantially free of a peroxide oxidizer and a metal ion-containing oxidizer.

Etching solution for tungsten and GST films

Composition, method and system for TiN hard mask removal from electronic circuitry devices, such as advanced pattern wafers have been disclosed. The cleaning compositions preferably comprise an etchant agent (also referred to as a base), an oxidizing agent, an oxidizing stabilizer (also referred to as a chelating agent), an ammonium salt, a corrosion inhibitor, and a solvent. Other optional additives could be provided. It is preferable that the pH of the cleaning composition be greater than 5.5. The cleaning composition is preferably free from dimethyl sulfoxide and tetramethylammonium hydroxide.

Composition for TiN hard mask removal and etch residue cleaning

Described herein is an aqueous composition for treating a substrate including patterns having line-space dimensions of 50 nm or below to prevent collapse of the patters, the composition comprising: a solvent system comprising water and a water-miscible organic solvent; a surface modifier that is a reaction product between an alkylamine and an organic acid; and an optional pH adjusting agent.

Compositions and methods for preventing collapse of high aspect ratio structures during drying

Etching compositions suitable for the selective removal of silicon over silicon-germanium from a microelectronic device comprising: water; at least one of a quaternary ammonium hydroxide compound and an amine compound; water-miscible solvent; optionally surfactant and optionally corrosion inhibitor; and the method of using the etching composition for the selective removal.

Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device

Described herein is an etching solution comprising water; an oxidizer; a water-miscible organic solvent; a fluoride ion source; a corrosion inhibitor and optionally, a surfactant, optionally a buffer, optionally a chelating agent. Such compositions are useful for the selective removal of silicon-germanium over germanium from a microelectronic device having such material(s) thereon during its manufacture.

Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ germanium stack during manufacture of a semiconductor device

Growing community of inventors

Chupei, Taiwan

Wen Dar Liu