Taiwan Semiconductor Manufacturing Comp. Ltd.

Wen-Chun Hou

Szu-Hung Yang

Che-Min Lin

Chao-Lung Chen

Hung-San Lu

Chao Yuan Chang

Chun-An Kung

Chin-Hsin Hsiao

Ping-Ching Jiang

A plating apparatus for electroplating a wafer includes a housing defining a plating chamber for housing a plating solution. A voltage source of the apparatus has a first terminal having a first polarity and a second terminal having a second polarity different than the first polarity. The first terminal is electrically coupled to the wafer. An anode is within the plating chamber, and the second terminal is electrically coupled to the anode. A membrane support is within the plating chamber and over the anode. The membrane support defines apertures, wherein in a first zone of the membrane support a first aperture-area to surface-area ratio is a first ratio, and in a second zone of the membrane support a second aperture-area to surface-area ratio is a second ratio, different than the first ratio.

Plating apparatus and method for electroplating wafer

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Tainan, Taiwan

Wen-Chun Hou