Taiwan Semiconductor Manufacturing Comp. Ltd.

Wen-Cheng Lo

Sun-Jay Chang

Stress memorization techniques (SMTs) for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a capping layer over a fin structure; forming an amorphous region within the fin structure while the capping layer is disposed over the fin structure; and performing an annealing process to recrystallize the amorphous region. The capping layer enables the fin structure to retain stress effects induced by forming the amorphous region and/or performing the annealing process.

Method of forming a FinFET device by implantation through capping layer

Dislocation SMT for FinFET device

A method for performing a stress memorization technique (SMT) a FinFET and a FinFET having memorized stress effects including multi-planar dislocations are disclosed. An exemplary embodiment includes receiving a FinFET precursor with a substrate, a fin structure on the substrate, an isolation region between the fin structures, and a gate stack over a portion of the fin structure. The gate stack separates a source region of the fin structure from a drain region of the fin structure and creates a gate region between the two. The embodiment also includes forming a stress-memorization technique (SMT) capping layer over at least a portion of each of the fin structures, isolation regions, and the gate stack, performing a pre-amorphization implant on the FinFET precursor by implanting an energetic doping species, performing an annealing process on the FinFET precursor, and removing the SMT capping layer.

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Zhubei, Taiwan

Wen-Cheng Lo