Taiwan Semiconductor Manufacturing Comp. Ltd.

Wen-Chao Shen

Kuang-Hsin Chen

Yung-Hsien Wu

I-Chen Huang

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a gate stack over the semiconductor substrate. The gate stack includes a first insulating layer, a charge trapping structure, a second insulating layer, and a gate electrode. The first insulating layer separates the semiconductor substrate from the charge trapping structure. The charge trapping structure is between the first insulating layer and the second insulating layer. The gate electrode is over the second insulating layer. The charge trapping structure includes a first layer and a second layer. The first layer includes zinc oxide, tin dioxide, titanium oxide, zinc tin oxide, indium oxide, indium zinc oxide, indium gallium zinc oxide, zinc oxynitride, tin oxynitride, titanium oxynitride, zinc tin oxynitride, indium oxynitride, indium zinc oxynitride, or indium gallium zinc oxynitride. The second layer includes nickel oxide, tin oxide, copper oxide, nickel oxynitride, tin oxynitride, or copper oxynitride. The semiconductor device structure includes a first doped region and a second doped region in the semiconductor substrate and on two opposite sides of the gate stack.

Semiconductor device structure

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a gate stack over the semiconductor substrate. The gate stack includes a first insulating layer, a first layer, a second layer, a second insulating layer, and a gate electrode. The first insulating layer separates the semiconductor substrate from the first layer. The second layer is between the first layer and the second insulating layer. The gate electrode is over the second insulating layer. There is a P-N junction between the first layer and the second layer. The semiconductor device structure includes a first doped region and a second doped region in the semiconductor substrate. The first layer, the first doped region, and the second doped region have a first type conductivity, which is opposite to a second type conductivity of the second layer.

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Zhubei, Taiwan

Wen-Chao Shen