United Microelectronics Corp.

Wen-Bo Ding

Sheng Zhang

Chien-Kee Pang

Liang Yi

Wen-Shen Li

Chien-En Hsu

Zhi-Rui Sheng

Chee-Hau Ng

Yu-Yang Chen

Xiaoyuan Zhi

Li-Da Huang

Wei-Hui Gao

A manufacturing method of a semiconductor device including the following steps is provided. A substrate having a device structure and a first interconnection structure on a front side is provided. A first annealing process is performed in an atmosphere of pure hydrogen at a first temperature. A second interconnection structure is formed on a back side of the substrate. A second annealing process is performed in an atmosphere of gas mixture including hydrogen at a second temperature.

Manufacturing method of semiconductor device

A wafer level packaging method includes the following steps. A first wafer is bonded over a second wafer. A first grinding process on the first wafer is performed, to remove an upper chamfered edge of the first wafer and reduce a thickness of the first wafer. A trimming process is performed on the first wafer, to remove a lower chamfered edge of the first wafer to form a trimmed first wafer. A second grinding process is performed on the trimmed first wafer, to reduce a thickness of the trimmed first wafer.

Wafer level packaging method

A method of manufacturing a semiconductor device includes providing a silicon substrate with multiple layers formed on a front side and a backside, wherein at least a dielectric layer is formed on the backside of the silicon substrate; defining isolation regions and active regions at the front side of the silicon substrate, wherein the active regions are separated by the isolation regions; treating the multiple layers formed at the front side and the backside of the silicon substrate, so as to remain the dielectric layer as an outermost layer exposed at the backside of the silicon substrate; and depositing a polysilicon layer on the isolation regions and the active regions at the front side of the silicon substrate.

Method of manufacturing semiconductor device for reducing grain size of polysilicon

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Singapore, Singapore

Wen-Bo Ding