Ecolab USA Inc.

Stmicroelectronics R&d (shanghai) Co. Ltd.

Wen Bai

Zhi Quan Chen

Jane B Wong Shing

Raymond D Miller, Jr

Jr Miller Raymond D

Zhi Chen

Fei Wang

Jian Xu

Jian Shen

Dennis L MacDonald

Ronald S Doles

Jia Wu

Dennis Macdonald

Jian Kun Shen

The invention provides a method for improving the effectiveness of colloidal silica. The method involves removing enough charged impurities from the colloid to prevent the charged particles from causing the colloid to become a viscous gel. The method however also involves not removing too many charged particles so the silica material doesn't gel by cross-linking with itself. This method is quite effective because it recognizes that materials that have accumulated during the formation of the colloid do perform an important function, but they can perform better at a lower concentration.

Process for producing high solids colloidal silica

The present invention relates to colloidal silicas having a low S-value and a high solids content, the preparation thereof, and the use thereof in the production of paper. When used in the production of paper, the colloidal silicas of the invention exhibit good retention and drainage performance so that they can be used in lower amounts compared to conventional colloidal silicas. The present invention also relates to an apparatus and a method for producing such activated colloidal silicas.

Silica sols, method and apparatus for producing the same and use thereof in papermaking

The gate of a drive transistor having a drain and source is discharged by a circuit including a sensing circuit configured to sense a drain-to-source voltage of the drive transistor. A first current sink path is coupled to the gate of the drive transistor. The first current sink path applies a high discharge current to the gate of the drive transistor when the sensing current senses a lower drain-to-source voltage of the drive transistor. A second current sink path is also coupled to the gate of the drive transistor. The second current sink path is configured to apply a low discharge current to the gate of the drive transistor when the sensing current senses a higher drain-to-source voltage of the drive transistor.

Driver circuit with controlled gate discharge current

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Shanghai, China

Wen Bai