Applied Materials, Inc.

Lam Research Corporation

Weiyi Luo

Dmitry Lubomirsky

Ellie Y Yieh

David Wingto Cheung

Muhammad M Rasheed

Qiwei Liang

Xinglong Chen

Canfeng Lai

Zhong Qiang Hua

Siqing Lu

Dengliang Yang

Haoquan Fang

Dan Zhang

Gnanamani Amburose

Robert Chen

Eunsuk Ko

Several designs of a gas distribution device for a substrate processing system are provided. The gas distribution device includes a dual plenum showerhead. Additionally, designs for a light blocking structure used with the showerheads are also provided.

Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead

A substrate processing system for selectively etching a substrate includes a first chamber and a second chamber. A first gas delivery system supplies an inert gas species to the first chamber. A plasma generating system generates plasma including ions and metastable species in the first chamber. A gas distribution device removes the ions from the plasma, blocks ultraviolet (UV) light generated by the plasma and delivers the metastable species to the second chamber. A substrate support is arranged below the gas distribution device to support the substrate. A second gas delivery system delivers a reactive gas species to one of the gas distribution device or a volume located below the gas distribution device. The metastable species transfer energy to the reactive gas species to selectively etch one exposed material of the substrate more than at least one other exposed material of the substrate.

A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

Internal balanced coil for inductively coupled high density plasma processing chamber

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Fremont, CA, United States of America

Weiyi Luo