Applied Materials, Inc.

Weiye He

Qintao Zhang

Jun-Feng Lu

Jian Kang

Ting Cai

Ma Ning

A method of promoting adhesion between a dielectric layer of a semiconductor device and a metal fill deposited within a trench in the dielectric layer, including performing an ion implantation process wherein an ion beam formed of an ionized dopant species is directed into the trench at an acute angle relative to a top surface of the dielectric layer to form an implantation layer in a sidewall of the trench, and depositing a metal fill in the trench atop an underlying bottom metal layer, wherein the metal fill adheres to the sidewall.

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Shanghai, China

Weiye He